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BTA316B-800B PDF预览

BTA316B-800B

更新时间: 2024-11-24 17:02:03
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
13页 332K
描述
Planar passivated high commutation three quadrant triac in a SOT404 plastic package intended for u

BTA316B-800B 数据手册

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BTA316B-800B  
3Q Hi-Com Triac  
23 July 2018  
Product data sheet  
1. General description  
Planar passivated high commutation three quadrant triac in a SOT404 plastic package intended for  
use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series B" triac  
will commutate the full RMS current at the maximum rated junction temperature without the aid of a  
snubber.  
2. Features and benefits  
3Q technology for improved noise immunity  
High commutation capability with maximum false trigger immunity  
High immunity to false turn-on by dV/dt  
High voltage capability  
Planar passivated for voltage ruggedness and reliability  
Surface mountable package  
Triggering in three quadrants only  
3. Applications  
Electronic thermostats (heating and cooling)  
High power motor controls e.g. washing machines and vacuum cleaners  
Rectifier-fed DC inductive loads e.g. DC motors and solenoids  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VDRM  
repetitive peak off-  
state voltage  
-
-
800  
V
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave; Tmb ≤ 101 °C; Fig. 1;  
Fig. 2; Fig. 3  
-
-
-
-
-
-
-
-
16  
A
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;  
state current  
140  
150  
125  
A
tp = 20 ms; Fig. 4; Fig. 5  
full sine wave; Tj(init) = 25 °C;  
tp = 16.7 ms  
A
Tj  
junction temperature  
°C  
Static characteristics  
IGT gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; Fig. 7  
2
2
-
-
50  
50  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; Fig. 7  
 
 
 
 

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