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BTA316-800B PDF预览

BTA316-800B

更新时间: 2024-11-20 17:01:07
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
13页 230K
描述
Planar passivated high commutation three quadrant triac in a SOT78 plastic package intended for us

BTA316-800B 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:1.96其他特性:SENSITIVE GATE
外壳连接:MAIN TERMINAL 2配置:SINGLE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:16 A
参考标准:IEC-60134断态重复峰值电压:800 V
表面贴装:NO端子面层:TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

BTA316-800B 数据手册

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BTA316-800B  
3Q Hi-Com Triac  
12 September 2018  
Product data sheet  
1. General description  
Planar passivated high commutation three quadrant triac in a SOT78 plastic package intended for  
use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series B" triac  
will commutate the full RMS current at the maximum rated junction temperature without the aid of a  
snubber.  
2. Features and benefits  
3Q technology for improved noise immunity  
High commutation capability with maximum false trigger immunity  
High immunity to false turn-on by dV/dt  
High voltage capability  
Planar passivated for voltage ruggedness and reliability  
Triggering in three quadrants only  
3. Applications  
Electronic thermostats (heating and cooling)  
High power motor controls e.g. washing machines and vacuum cleaners  
Rectifier-fed DC inductive loads e.g. DC motors and solenoids  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VDRM  
repetitive peak off-  
state voltage  
-
-
800  
V
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave; Tmb ≤ 101 °C; Fig. 1;  
Fig. 2; Fig. 3  
-
-
-
-
-
-
-
-
16  
A
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;  
state current  
140  
150  
125  
A
tp = 20 ms; Fig. 4; Fig. 5  
full sine wave; Tj(init) = 25 °C;  
tp = 16.7 ms  
A
Tj  
junction temperature  
°C  
Static characteristics  
IGT gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; Fig. 7  
2
2
-
-
50  
50  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; Fig. 7  
 
 
 
 

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