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BTA208X_SERIES_B

更新时间: 2024-11-12 23:35:59
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6页 45K
描述
Three quadrant triacs high commutation

BTA208X_SERIES_B 数据手册

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Philips Semiconductors  
Product specification  
Three quadrant triacs  
high commutation  
BTA208X series B  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass passivated high commutation  
triacs in a full pack, plastic envelope  
intended for use in motor control  
circuitswherehigh staticanddynamic  
dV/dt and high dI/dt can occur. These  
devices will commutate the full rated  
rms current at the maximum rated  
junction temperature, without the aid  
of a snubber.  
SYMBOL  
PARAMETER  
MAX. MAX. MAX. UNIT  
BTA208X- 500B 600B 800B  
VDRM  
Repetitive peak off-state  
voltages  
RMS on-state current  
Non-repetitive peak  
on-state current  
500  
600  
800  
V
IT(RMS)  
ITSM  
8
65  
8
65  
8
65  
A
A
PINNING - SOT186A  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
case  
T2  
T1  
2
main terminal 2  
gate  
3
G
1
2 3  
case isolated  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-600  
6001  
-600  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
6001  
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave;  
8
A
Ths 73 ˚C  
Non-repetitive peak  
on-state current  
full sine wave;  
Tj = 25 ˚C prior to  
surge  
t = 20 ms  
-
-
-
65  
71  
A
A
t = 16.7 ms  
I2t  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
t = 10 ms  
21  
A2s  
A/µs  
dIT/dt  
ITM = 12 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
100  
IGM  
-
-
-
-
2
5
5
A
V
W
W
VGM  
PGM  
PG(AV)  
over any 20 ms  
period  
0.5  
Tstg  
Tj  
Storage temperature  
Operating junction  
temperature  
-40  
-
150  
125  
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.  
September 1997  
1
Rev 1.200  

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