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BTA208X-1000B PDF预览

BTA208X-1000B

更新时间: 2024-11-14 17:01:39
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
13页 298K
描述
Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package i

BTA208X-1000B 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TO-220FReach Compliance Code:not_compliant
HTS代码:8541.30.00.80风险等级:5.31
外壳连接:ISOLATED配置:SINGLE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:8 A
参考标准:IEC-60134断态重复峰值电压:1000 V
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:TRIAC

BTA208X-1000B 数据手册

 浏览型号BTA208X-1000B的Datasheet PDF文件第2页浏览型号BTA208X-1000B的Datasheet PDF文件第3页浏览型号BTA208X-1000B的Datasheet PDF文件第4页浏览型号BTA208X-1000B的Datasheet PDF文件第5页浏览型号BTA208X-1000B的Datasheet PDF文件第6页浏览型号BTA208X-1000B的Datasheet PDF文件第7页 
BTA208X-1000B  
3Q Hi-Com Triac  
19 September 2018  
Product data sheet  
1. General description  
Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package  
intended for use in circuits where very high blocking voltage, high static and dynamic dV/dt and  
high dI/dt can occur. This "series B" triac will commutate the full rated RMS current at the maximum  
rated junction temperature without the aid of a snubber.  
2. Features and benefits  
3Q technology for improved noise immunity  
High commutation capability with maximum false trigger immunity  
High immunity to false turn-on by dV/dt  
Isolated mounting base package  
Planar passivated for voltage ruggedness and reliability  
Triggering in three quadrants only  
Very high voltage capability  
3. Applications  
Compressor starting controls  
General purpose motor controls  
Reversing induction motor controls e.g. vertical axis washing machines  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VDRM  
repetitive peak off-  
state voltage  
-
-
1000  
V
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave; Th ≤ 73 °C; Fig. 1;  
Fig. 2; Fig. 3  
-
-
-
-
-
-
-
-
8
A
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;  
state current  
65  
71  
125  
A
tp = 20 ms; Fig. 4; Fig. 5  
full sine wave; Tj(init) = 25 °C;  
tp = 16.7 ms  
A
Tj  
junction temperature  
°C  
Static characteristics  
IGT gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; Fig. 7  
2
2
18  
21  
50  
50  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; Fig. 7  
 
 
 
 

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