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BTA208X-1000B PDF预览

BTA208X-1000B

更新时间: 2024-11-11 21:55:43
品牌 Logo 应用领域
恩智浦 - NXP 可控硅
页数 文件大小 规格书
6页 45K
描述
Three quadrant triacs high commutation

BTA208X-1000B 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否无铅: 不含铅
是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80风险等级:5.19
外壳连接:ISOLATED配置:SINGLE
关态电压最小值的临界上升速率:1000 V/us最大直流栅极触发电流:50 mA
最大直流栅极触发电压:1.5 V最大维持电流:60 mA
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大漏电流:0.5 mA
元件数量:1端子数量:3
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:8 A
断态重复峰值电压:1000 V子类别:TRIACs
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:TRIAC
Base Number Matches:1

BTA208X-1000B 数据手册

 浏览型号BTA208X-1000B的Datasheet PDF文件第2页浏览型号BTA208X-1000B的Datasheet PDF文件第3页浏览型号BTA208X-1000B的Datasheet PDF文件第4页浏览型号BTA208X-1000B的Datasheet PDF文件第5页浏览型号BTA208X-1000B的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Three quadrant triacs  
high commutation  
BTA208X-1000B  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Passivated high voltage, high commutation  
triac in a full pack, plastic envelope. This  
triac is intended for use in motor control  
circuits where high blocking voltage, high  
static and dynamic dV/dt and high dI/dt can  
occur. This device will commutate the full  
rated rms current at the maximum rated  
junction temperature, without the aid of a  
snubber.  
SYMBOL  
PARAMETER  
MAX. UNIT  
VDRM  
Repetitive peak off-state  
1000  
V
voltages  
IT(RMS)  
ITSM  
RMS on-state current  
8
65  
A
A
Non-repetitive peak on-state  
current  
PINNING - SOT186A  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
case  
main terminal 1  
main terminal 2  
gate  
T2  
T1  
2
3
G
1
2 3  
case isolated  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
1000  
8
UNIT  
V
VDRM  
Repetitive peak off-state  
voltages  
-
-
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave;  
A
Ths 73 ˚C  
Non-repetitive peak  
on-state current  
full sine wave;  
Tj = 25 ˚C prior to  
surge  
t = 20 ms  
-
-
-
65  
71  
A
A
t = 16.7 ms  
I2t  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
t = 10 ms  
21  
A2s  
A/µs  
dIT/dt  
ITM = 12 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
100  
IGM  
-
-
-
-
2
5
5
A
V
W
W
VGM  
PGM  
PG(AV)  
over any 20 ms  
period  
0.5  
Tstg  
Tj  
Storage temperature  
Operating junction  
temperature  
-40  
-
150  
125  
˚C  
˚C  
August 2003  
1
Rev 1.000  

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