Datasheet > BTA06-600B

BTA06-600B

更新时间： 2024-09-09 04:09:31

品牌	Logo	应用领域
SEMIWELL		栅极三端双向交流开关局域网
页数	文件大小	规格书
6页	647K
描述
Bi-Directional Triode Thyristor

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BTA06-600B 数据手册

Preliminary

SemiWell Semiconductor

BTA06-600B

UL : E228720

Bi-Directional Triode Thyristor

Symbol

○ 2.T2

Features

▼▲

○

3.Gate

◆ Repetitive Peak Off-State Voltage : 600V

◆ R.M.S On-State Current ( I

= 6 A )

T(RMS)

○

1.T1

◆ High Commutation dv/dt

◆ Isolation Voltage ( V

= 1500V AC )

ISO

TO-220F

General Description

This device is fully isolated package suitable for AC switching

application, phase control application such as fan speed and

temperature modulation control, lighting control and static

switching relay.

This device is approved to comply with applicable require-

ments by Underwriters Laboratories Inc.

Absolute Maximum Ratings ( T_J= 25°C unless otherwise specified )

Symbol

V_DRM

Parameter

Repetitive Peak Off-State Voltage

R.M.S On-State Current

Condition

Ratings

600

Units

T_C= 94 °C

I_T(RMS)

6.0

One Cycle, 50Hz/60Hz, Peak,

Non-Repetitive

I_TSM

Surge On-State Current

60/66

I²t

P_GM

P_G(AV)

I_GM

3.0

I²t

A²s

Peak Gate Power Dissipation

Average Gate Power Dissipation

Peak Gate Current

0.3

2.0

V_GM

V_ISO

T_J

Peak Gate Voltage

Isolation Breakdown Voltage(R.M.S.)

Operating Junction Temperature

Storage Temperature

Mass

A.C. 1 minute

1500

- 40 ~ 125

- 40 ~ 150

2.0

°C

T_STG

Mar, 2004. Rev. 0

1/6

12 3 4 5 6

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