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BT137S-600D,118 PDF预览

BT137S-600D,118

更新时间: 2024-11-13 21:21:11
品牌 Logo 应用领域
恩智浦 - NXP 三端双向交流开关栅极
页数 文件大小 规格书
14页 218K
描述
BT137S-600D

BT137S-600D,118 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:DPAK包装说明:PLASTIC, SC-63, DPAK-3
针数:3Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80风险等级:6.94
其他特性:SENSITIVE GATE外壳连接:MAIN TERMINAL 2
配置:SINGLE最大直流栅极触发电流:5 mA
最大直流栅极触发电压:1.5 V最大维持电流:10 mA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
最大漏电流:0.5 mA湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大均方根通态电流:8 A
断态重复峰值电压:600 V子类别:TRIACs
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

BT137S-600D,118 数据手册

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K
A
P
BT137S-600D  
4Q Triac  
D
26 September 2013  
Product data sheet  
1. General description  
Planar passivated very sensitive gate four quadrant triac in a SOT428 (DPAK)  
surface-mountable plastic package intended for use in general purpose bidirectional  
switching and phase control applications, where high sensitivity is required in all four  
quadrants. This very sensitive gate "series D" triac is intended to be interfaced directly to  
microcontrollers, logic integrated circuits and other low power gate trigger circuits.  
2. Features and benefits  
Direct triggering from low power drivers and logic ICs  
High blocking voltage capability  
Low holding current for low current loads and lowest EMI at commutation  
Planar passivated for voltage ruggedness and reliability  
Surface-mountable package  
Triggering in all four quadrants  
Very sensitive gate  
3. Applications  
General purpose motor control  
General purpose switching  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VDRM  
repetitive peak off-  
state voltage  
-
-
600  
V
ITSM  
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;  
-
-
-
-
65  
8
A
A
state current  
tp = 20 ms; Fig. 4; Fig. 5  
IT(RMS)  
RMS on-state current  
full sine wave; Tmb ≤ 102 °C; Fig. 1;  
Fig. 2; Fig. 3  
Static characteristics  
IGT gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C  
-
-
2.5  
3.5  
5
5
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; Fig. 7  
Scan or click this QR code to view the latest information for this product  
 
 
 
 

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