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BT137S-600E PDF预览

BT137S-600E

更新时间: 2024-11-14 17:01:43
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
13页 273K
描述
Planar passivated sensitive gate four quadrant triac in a SOT428 (DPAK) surface-mountable plastic

BT137S-600E 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80风险等级:5.55
其他特性:SENSITIVE GATE外壳连接:MAIN TERMINAL 2
配置:SINGLEJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:8 A
参考标准:IEC-60134断态重复峰值电压:600 V
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

BT137S-600E 数据手册

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BT137S-600E  
4Q Triac  
15 September 2018  
Product data sheet  
1. General description  
Planar passivated sensitive gate four quadrant triac in a TO252 (DPAK) surface-mountable plastic  
package intended for use in general purpose bidirectional switching and phase control applications.  
This sensitive gate "series E" triac is intended to be interfaced directly to microcontrollers, logic  
integrated circuits and other low power gate trigger circuits.  
2. Features and benefits  
Direct triggering from low power drivers and logic ICs  
High blocking voltage capability  
Low holding current for low current loads and lowest EMI at commutation  
Planar passivated for voltage ruggedness and reliability  
Sensitive gate  
Surface-mountable package  
Triggering in all four quadrants  
3. Applications  
General purpose motor controls  
General purpose switching  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VDRM  
repetitive peak off-  
state voltage  
-
-
600  
V
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave; Tmb ≤ 102 °C; Fig. 1;  
Fig. 2; Fig. 3  
-
-
-
-
-
-
-
-
8
A
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;  
state current  
65  
71  
125  
A
tp = 20 ms; Fig. 4; Fig. 5  
full sine wave; Tj(init) = 25 °C;  
tp = 16.7 ms  
A
Tj  
junction temperature  
°C  
Static characteristics  
IGT gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; Fig. 7  
-
-
2.5  
4
10  
10  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; Fig. 7  
 
 
 
 

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