Datasheet > BT136S-800E

BT136S-800E

更新时间： 2024-04-09 18:59:05

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
12页	520K
描述
Planar passivated sensitive gate four quadrant triac in a SOT428 (DPAK) surface-mountable plastic

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BT136S-800E 数据手册

WeEn Semiconductors

BT136S-800E

4Q Triac

10. Characteristics

Table 7. Characteristics

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

I_GT

gate trigger current

V_D= 12 V; I_T= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 7

2.5

V_D= 12 V; I_T= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G+;

T_j= 25 °C; Fig. 7

I_L

latching current

V_D= 12 V; I_G= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 8

V_D= 12 V; I_G= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 8

2.5

V_D= 12 V; I_G= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 8

V_D= 12 V; I_G= 0.1 A; T2- G+;

T_j= 25 °C; Fig. 8

I_H

holding current

V_D= 12 V; T_j= 25 °C; Fig. 9

I_T= 5 A; T_j= 25 °C; Fig. 10

2.2

1.4

0.7

1.7

V_T

V_GT

on-state voltage

gate trigger voltage

V_D= 12 V; I_T= 0.1 A; T_j= 25 °C;

Fig. 11

V_D= 400 V; I_T= 0.1 A; T_j= 125 °C

V_D= 800 V; T_j= 125 °C

0.25

0.4

I_D

oﬀ-state current

0.1

0.5

Dynamic characteristics

dV_D/dt

rate of rise of oﬀ-state

voltage

V_DM= 536 V; T_j= 125 °C; (V_DM= 67% of

V_DRM); exponential waveform; gate open

circuit

V/μs

BT136S-800E

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Product data sheet

01 April 2021

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