Datasheet > BSS138ZN3-0-T1-G

BSS138ZN3-0-T1-G

更新时间： 2022-02-26 14:13:01

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
9页	481K
描述
50V N-Channel Enhancement Mode MOSFET

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数据手册

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BSS138ZN3-0-T1-G 数据手册

Spec. No. : C834N3

Issued Date : 2017.11.29

Revised Date :

CYStech Electronics Corp.

Page No. : 8/9

Recommended wave soldering condition

Product

Peak Temperature

Soldering Time

5 +1/-1 seconds

Pb-free devices

260 +0/-5 °C

Recommended temperature profile for IR reflow

Profile feature

Average ramp-up rate

(Tsmax to Tp)

Sn-Pb eutectic Assembly

Pb-free Assembly

3°C/second max.

Preheat

−Temperature Min(T^Smin)

−Temperature Max(TS max)

−Time(ts min to ts max)

100°C

150°C

60-120 seconds

150°C

200°C

60-180 seconds

Time maintained above:

−Temperature (TL)

− Time (tL)

183°C

60-150 seconds

240 +0/-5 °C

217°C

60-150 seconds

260 +0/-5 °C

Peak Temperature(TP)

Time within 5°C of actual peak

temperature(tp)

10-30 seconds

20-40 seconds

Ramp down rate

6°C/second max.

8 minutes max.

6 minutes max.

Time 25 °C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

BSS138ZN3

CYStek Product Specification

1...5 6 789

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