Datasheet > BSPB80N06S2-09

BSPB80N06S2-09

更新时间： 2024-02-12 20:33:17

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	206K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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BSPB80N06S2-09 技术参数

SPP80N06S2-09

SPB80N06S2-09

Published by

Infineon Technologies AG,

Bereichs Kommunikation

St.-Martin-Strasse 53,

D-81541 München

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted

characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,

regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express

written approval of Infineon Technologies, if a failure of such components can reasonably be expected to

cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device

or system Life support devices or systems are intended to be implanted in the human body, or to support

and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health

of the user or other persons may be endangered.

Further information

Please notice that the part number is BSPP80N06S2-09 and BSPB80N06S2-09, for simplicity the device is referred

to by the term SPP80N06S2-09 and SPB80N06S2-09 throughout this documentation.

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2003-05-09

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