Datasheet > BSPB80N06S2-09

BSPB80N06S2-09

更新时间： 2024-02-25 22:11:16

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	206K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BSPB80N06S2-09 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.76	配置：	Single
最大漏极电流 (Abs) (ID)：	70 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	190 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

BSPB80N06S2-09 数据手册

SPP80N06S2-09

SPB80N06S2-09

Thermal Characteristics

Parameter

Symbol

Values

typ. max.

Unit

min.

Characteristics

0.52

0.8 K/W

Thermal resistance, junction - case

Thermal resistance, junction - ambient, leaded

SMD version, device on PCB:

@ min. footprint

thJC

thJA

@ 6 cm cooling area

Electrical Characteristics, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ. max.

Static Characteristics

Drain-source breakdown voltage

(BR)DSS

=0V, I =1mA

2.1

Gate threshold voltage, V = V

GS(th)

= 125 µA

µA

Zero gate voltage drain current

DSS

=55V, V =0V, T =25°C

0.01

=55V, V =0V, T =125°C

100

100 nA

Gate-source leakage current

GSS

=20V, V =0V

7.6

9.1

Drain-source on-state resistance

mΩ

DS(on)

=10V, I =50A

Current limited by bondwire ; with an R

= 0.8K/W the chip is able to carry I = 99A at 25°C, for detailed

thJC

information see app.-note ANPS071E available at www.infineon.com/optimos

Defined by design. Not subject to production test.

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Page 2

2003-05-09

123 4 5 6 7 8

下载PDF

与BSPB80N06S2-09相关器件

型号	品牌	描述	获取价格	数据表
BSPB80N06S2L-06	INFINEON	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	获取价格
BSPB80N06S2L-07	INFINEON	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	获取价格
BSPB80N06S2L-11	INFINEON	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	获取价格
BSPCM	ETC	SNAP 9V MALE PC MOUNT	获取价格
BS-PCSS2/4	ETC	MITTELSCHIENE 500X220MM	获取价格
BSPD0180DINL	ETC	0-180V DATA SIGNAL DIN RAIL L -	获取价格