Datasheet > BSPB80N06S2-09

BSPB80N06S2-09

更新时间： 2024-01-13 13:49:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	206K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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技术参数
数据手册

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BSPB80N06S2-09 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.76	配置：	Single
最大漏极电流 (Abs) (ID)：	70 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	190 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

BSPB80N06S2-09 数据手册

SPP80N06S2-09

SPB80N06S2-09

Electrical Characteristics

Parameter

Symbol

Conditions

Values

Unit

min. typ. max.

Dynamic Characteristics

Transconductance

≥2*I *R ,

DS(on)max

I =70A

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

=0V, V =25V,

2360 3140 pF

iss

f=1MHz

610

150

810

230

21 ns

oss

rss

=30V, V =10V,

d(on)

DD GS

I =80A,

R =4.7Ω

Turn-off delay time

Fall time

d(off)

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

=44V, I =80A

16 nC

=44V, I =80A,

Gate charge total

=0 to 10V

=44V, I =80A

5.8

Gate plateau voltage

(plateau)

Reverse Diode

T =25°C

Inverse diode continuous

forward current

320

1.3

Inv. diode direct current, pulsed

Inverse diode forward voltage

Reverse recovery time

=0V, I =80A

0.9

V =30V, I =l ,

63 ns

95 nC

F S

di /dt=100A/µs

Reverse recovery charge

Page 3

2003-05-09

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