Datasheet > BSPB80N06S2L-11

BSPB80N06S2L-11

更新时间： 2024-02-27 20:34:06

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	201K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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中文翻译

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技术参数
数据手册

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BSPB80N06S2L-11 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.76	配置：	Single
最大漏极电流 (Abs) (ID)：	58 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	158 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

BSPB80N06S2L-11 数据手册

SPP80N06S2L-11

SPB80N06S2L-11



OptiMOS Power-Transistor

Product Summary

Feature

• N-Channel

mΩ

DS(on)

• Enhancement mode

• Logic Level

P- TO263 -3-2

P- TO220 -3-1

• Avalanche rated

• dv/dt rated

Type

Package

Ordering Code

Marking

2N06L11

SPP80N06S2L-11 P- TO220 -3-1 Q67060-S6035

SPB80N06S2L-11 P- TO263 -3-2 Q67060-S6036

Maximum Ratings, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T =25°C,

320

Pulsed drain current

D puls

T =25°C

280

Avalanche energy, single pulse

I =80 A , V =25V, R =25Ω

Repetitive avalanche energy, limited by T

Reverse diode dv/dt

jmax

dv/dt

kV/µs

I =80A, V =44V, di/dt=200A/µs, T =175°C

jmax

Gate source voltage

Power dissipation

±20

158

tot

T =25°C

°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

T , T

-55... +175

55/175/56

stg

Page 1

2003-05-09

12 3 4 5 6 7 8

中文翻译

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