是否Rohs认证: | 符合 | 生命周期: | Transferred |
Reach Compliance Code: | unknown | 风险等级: | 5.06 |
Is Samacsys: | N | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最大漏源导通电阻: | 7 Ω |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 4 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSP126-T | NXP |
获取价格 |
TRANSISTOR 0.35 A, 250 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BSP126T/R | NXP |
获取价格 |
TRANSISTOR 375 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SMD, SC-73, 4 PIN, | |
BSP126TRL | NXP |
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TRANSISTOR 300 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S | |
BSP126TRL | YAGEO |
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Small Signal Field-Effect Transistor, 0.3A I(D), 250V, 1-Element, N-Channel, Silicon, Meta | |
BSP126TRL13 | NXP |
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TRANSISTOR 300 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S | |
BSP126TRL13 | YAGEO |
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Small Signal Field-Effect Transistor, 0.3A I(D), 250V, 1-Element, N-Channel, Silicon, Meta | |
BSP127 | NXP |
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N-channel enhancement mode vertical D-MOS transistor | |
BSP127135 | NXP |
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TRANSISTOR 350 mA, 270 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S | |
BSP127-T | NXP |
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TRANSISTOR 0.35 A, 270 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BSP127T/R | NXP |
获取价格 |
TRANSISTOR 0.35 A, 270 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-73, 4 PIN, |