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BSP126/T3 PDF预览

BSP126/T3

更新时间: 2024-11-01 14:48:07
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
12页 67K
描述
TRANSISTOR Si, SMALL SIGNAL, FET, FET General Purpose Small Signal

BSP126/T3 技术参数

是否Rohs认证:符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.06
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最大漏源导通电阻:7 Ω
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
表面贴装:YES端子面层:TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BSP126/T3 数据手册

 浏览型号BSP126/T3的Datasheet PDF文件第2页浏览型号BSP126/T3的Datasheet PDF文件第3页浏览型号BSP126/T3的Datasheet PDF文件第4页浏览型号BSP126/T3的Datasheet PDF文件第5页浏览型号BSP126/T3的Datasheet PDF文件第6页浏览型号BSP126/T3的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BSP126  
N-channel enhancement mode  
vertical D-MOS transistor  
Product specification  
2002 Feb 19  
Supersedes data of 1997 Jun 23  

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