Datasheet > BSP126 (KSP126)

BSP126 (KSP126)

更新时间： 2024-10-31 18:09:31

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	364K
描述
N-Channel MOSFET

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中文翻译

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数据手册

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BSP126 (KSP126) 数据手册

SMD Type

MOSFET

Transistors

N-Channel MOSFET

BSP126 (KSP126)

Unit:mm

SOT-223

6.50±0.2

3.00±0.1

■ Features

● VDS (V) = 250V

● ID = 350mA

● R^DS(ON)< 7Ω @ V^GS= 10V

● Direct interface to C-MOS, TTL,etc.

● High-speed switching.

● No secondary breakdown.

0.250

2.30 (typ)

0.84 (max)

Gauge Plane

0.66 (min)

1.Gate

2.Drain

3.Source

4.Drain

4.60 (typ)

■ Absolute Maximum Ratings (TA = 25℃ unless otherwise noted)

Parameter

Symbol

Rating

250

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

VDS

±20

350

1.2

1.5

Thermal Resistance.Junction- to-Ambient (Note 1)

Junction Temperature

th j-a

83.3

K/W

150

℃

Storage Temperature Range

stg

-65 to 150

Note 1. Device mounted on an epoxy printed-circuit board 40 mm×40 mm×1.5 mm; mounting pad for the drain lead min.6cm².

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