是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Contact Manufacturer | 包装说明: | HC-49/US, 2 PIN |
Reach Compliance Code: | compliant | HTS代码: | 8541.60.00.60 |
风险等级: | 5.72 | 其他特性: | AT-CUT |
老化: | 5 PPM/FIRST YEAR | 晶体/谐振器类型: | SERIES - FUNDAMENTAL |
驱动电平: | 1000 µW | 频率稳定性: | 0.005% |
频率容差: | 50 ppm | 安装特点: | THROUGH HOLE MOUNT |
标称工作频率: | 36 MHz | 最高工作温度: | 70 °C |
最低工作温度: | 物理尺寸: | L11.2XB4.7XH3.5 (mm)/L0.441XB0.185XH0.138 (inch) | |
串联电阻: | 25 Ω | 表面贴装: | NO |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSEA1-36.000MHZ-L | MMD |
获取价格 |
暂无描述 |
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BSF024N03LT3G | INFINEON |
获取价格 |
OptiMOS3 Power-MOSFET |
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BSF030NE2LQ | INFINEON |
获取价格 |
n-Channel Power MOSFET |
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BSF045N03LQ3G | INFINEON |
获取价格 |
Power Field-Effect Transistor, 18A I(D), 30V, 0.0072ohm, 1-Element, N-Channel, Silicon, Me |
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BSF045N03LQ3GXUMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 18A I(D), 30V, 0.0072ohm, 1-Element, N-Channel, Silicon, Me |
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BSF045N03MQ3G | INFINEON |
获取价格 |
Power Field-Effect Transistor, 18A I(D), 30V, 0.0059ohm, 1-Element, N-Channel, Silicon, Me |
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BSF050N03LQ3G | INFINEON |
获取价格 |
OptiMOS3 Power-MOSFET |
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BSF050N03LQ3GXUMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 15A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Met |
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BSF053N03LTG | INFINEON |
获取价格 |
OptiMOS2 Power-MOSFET |
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BSF053N03LTGXUMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Me |
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