5秒后页面跳转
BSF110N06NT3GXUMA1 PDF预览

BSF110N06NT3GXUMA1

更新时间: 2024-01-22 17:22:18
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
11页 784K
描述
Power Field-Effect Transistor, 11A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, CANPAK-3

BSF110N06NT3GXUMA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:CHIP CARRIER, R-MBCC-N3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:5.82雪崩能效等级(Eas):100 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):11 A
最大漏源导通电阻:0.011 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-MBCC-N3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:METAL封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):188 A
表面贴装:YES端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BSF110N06NT3GXUMA1 数据手册

 浏览型号BSF110N06NT3GXUMA1的Datasheet PDF文件第2页浏览型号BSF110N06NT3GXUMA1的Datasheet PDF文件第3页浏览型号BSF110N06NT3GXUMA1的Datasheet PDF文件第4页浏览型号BSF110N06NT3GXUMA1的Datasheet PDF文件第5页浏览型号BSF110N06NT3GXUMA1的Datasheet PDF文件第6页浏览型号BSF110N06NT3GXUMA1的Datasheet PDF文件第7页 
BSF110N06NT3 G  
OptiMOS3 Power-MOSFET  
Product Summary  
Features  
VDS  
60  
11  
47  
V
• Optimized technology for DC/DC converters  
• Excellent gate charge x R DS(on) product (FOM)  
RDS(on),max  
ID  
mW  
A
• Superior thermal resistance  
CanPAKS  
MG-WDSON-2  
• Dual sided cooling  
• Low parasitic inductance  
• Low profile (<0.7mm)  
• N-channel, normal level  
• 100% avalanche tested  
• Pb-free plating; RoHS compliant  
• Qualified according to JEDEC1) for target applications  
• Compatible with DirectFET® package ST footprint and outline2)  
Type  
Package  
Outline  
ST  
Marking  
0306  
BSF110N06NT3 G  
MG-WDSON-2  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
V GS=10 V, T C=25 °C  
V GS=10 V, T C=100 °C  
Continuous drain current  
47  
30  
A
V GS=10 V, T A=25 °C,  
R thJA=58 K/W3)  
11  
Pulsed drain current4)  
I D,pulse  
E AS  
T C=25 °C  
188  
100  
±20  
Avalanche energy, single pulse5)  
I D=30 A, R GS=25 W  
mJ  
V
V GS  
Gate source voltage  
1) J-STD20 and JESD22  
2) DirectFET® is a trademark of International Rectifier Corporation  
BSF110N06NT3 G uses DirectFET® technology licensed from International Rectifier Corporation  
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
4) See figure 3 for more detailed information  
5) See figure 13 for more detailed information  
Rev. 2.0  
page 1  
2012-07-05  

与BSF110N06NT3GXUMA1相关器件

型号 品牌 获取价格 描述 数据表
BSF134N10NJ3 G INFINEON

获取价格

英飞凌的 100V OptiMOS? 功率 MOSFET 可以为高效率、高功率密度的 SM
BSF134N10NJ3G INFINEON

获取价格

n-Channel Power MOSFET
BSF450NE7NH3 INFINEON

获取价格

Material Content Data Sheet
BSF450NE7NH3_15 INFINEON

获取价格

Material Content Data Sheet
BSF-C100 MINI

获取价格

Band Stop Filter
BSF-C100+ MINI

获取价格

Band Stop Filter
BSF-C125 MINI

获取价格

Band Stop Filter
BSF-C125+ MINI

获取价格

Band Stop Filter
BSF-C140 MINI

获取价格

Band Stop Filter
BSF-C140+ MINI

获取价格

Band Stop Filter