5秒后页面跳转
BSD3C031V PDF预览

BSD3C031V

更新时间: 2024-11-21 17:15:27
品牌 Logo 应用领域
友台半导体 - UMW 脉冲
页数 文件大小 规格书
4页 470K
描述
反向截止电压(Vrwm):3.3V;极性/通道数(Channel):1-Line,Bidirectional;击穿电压(VBR):4.0V;峰值脉冲电流(Ipp):20A;最大钳位电压(Vc):24V;电容(Cj):100pF

BSD3C031V 数据手册

 浏览型号BSD3C031V的Datasheet PDF文件第2页浏览型号BSD3C031V的Datasheet PDF文件第3页浏览型号BSD3C031V的Datasheet PDF文件第4页 
R
UMW  
BSD3C031V  
Features  
480Watts peak pulse power (tp =8/20μs)  
Bidirectional configurations  
Solid-state silicon-avalanche technology  
Low clamping voltage  
Low leakage current  
SOD-323  
IEC 61000-4-2 ±30kV contact ±30kV air  
IEC 61000-4-4 (EFT) 40A (5/50ns)  
IEC 61000-4-5 (Lightning) 20A(8/20μs)  
Applications  
Mechanical Data  
Microprocessor based equipment  
SOD-323 package  
Personal Digital Assistants (PDA’s)  
Notebooks, Desktops, and Servers  
Portable Instrumentation  
Molding compound flammability rating: UL94V-0  
Packaging: Tape and Reel  
Pagers Peripherals  
Absolute Maxim um Rating  
Rating  
Symbol  
PPP  
Value  
480  
20  
Units  
Watts  
A
Peak Pulse Power ( tp =8/20μs)  
Peak Pulse Current ( tp =8/20μs )(note1)  
Ipp  
ESD per IEC 61000-4-2(Air)  
ESD per IEC 61000-4-2(Contact)  
30  
30  
VESD  
kV  
Lead SolderingTemperature  
JunctionTemperature  
StorageTemperature  
TL  
TJ  
260(10seconds)  
-55 to + 150  
Tstg  
-55 to + 150  
www.umw-ic.com  
UTD Semiconductor Co.,Limited  
1

与BSD3C031V相关器件

型号 品牌 获取价格 描述 数据表
BSD3C051V UMW

获取价格

反向截止电压(Vrwm):5V;极性/通道数(Channel):1-Line,Bidire
BSD5A051U UMW

获取价格

反向截止电压(Vrwm):5V;极性/通道数(Channel):1-Line,Unidir
BSD5A051V UMW

获取价格

反向截止电压(Vrwm):5V;极性/通道数(Channel):1-Line,Unidir
BSD5A071V35 UMW

获取价格

反向截止电压(Vrwm):8V;极性/通道数(Channel):1-Line,Unidir
BSD5C031V UMW

获取价格

反向截止电压(Vrwm):3.3V;极性/通道数(Channel):1-Line,Unid
BSD5C051U UMW

获取价格

反向截止电压(Vrwm):5V;极性/通道数(Channel):1-Line,Bidire
BSD5C051V UMW

获取价格

反向截止电压(Vrwm):5v;极性/通道数(Channel):1-Line,Bidire
BSD816SN INFINEON

获取价格

OptiMOS™2 Small-Signal-Transistor
BSD816SNH6327 INFINEON

获取价格

Small Signal Field-Effect Transistor
BSD816SNH6327XTSA1 INFINEON

获取价格

Small Signal Field-Effect Transistor,