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BSD840NH6327XTSA1 PDF预览

BSD840NH6327XTSA1

更新时间: 2024-11-20 14:49:19
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网光电二极管晶体管
页数 文件大小 规格书
9页 377K
描述
Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6

BSD840NH6327XTSA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:10 weeks
风险等级:1.66其他特性:AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):3.5 A最大漏源导通电阻:0.4 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

BSD840NH6327XTSA1 数据手册

 浏览型号BSD840NH6327XTSA1的Datasheet PDF文件第2页浏览型号BSD840NH6327XTSA1的Datasheet PDF文件第3页浏览型号BSD840NH6327XTSA1的Datasheet PDF文件第4页浏览型号BSD840NH6327XTSA1的Datasheet PDF文件第5页浏览型号BSD840NH6327XTSA1的Datasheet PDF文件第6页浏览型号BSD840NH6327XTSA1的Datasheet PDF文件第7页 
BSD840N  
OptiMOS™2 Small-Signal-Transistor  
Features  
Product Summary  
VDS  
20  
V
• Dual N-channel  
RDS(on),max  
VGS=2.5 V  
VGS=1.8 V  
400  
560  
0.88  
mW  
• Enhancement mode  
• Ultra Logic level (1.8V rated)  
ID  
A
• Avalanche rated  
PG-SOT-363  
• Qualified according to AEC Q101  
• 100% lead-free; RoHS compliant  
• Halogen-free according to IEC61249-2-21  
6
5
4
1
2
3
Type  
Package  
Tape and Reel Information  
Marking  
Lead Free  
Yes  
Packing  
BSD840N  
PG-SOT-363 H6327: 3000 pcs/ reel  
XBs  
Non dry  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Parameter 1)  
Value  
Symbol Conditions  
Unit  
I D  
T A=25 °C  
T A=70 °C  
T A=25 °C  
Continuous drain current  
0.88  
0.71  
3.5  
A
I D,pulse  
Pulsed drain current  
E AS  
I D=0.88 A, R GS=16 W  
Avalanche energy, single pulse  
1.6  
6
mJ  
I D=0.88 A, V DS=16 V,  
di /dt =200 A/µs,  
T j,max=150 °C  
Reverse diode dv /dt  
dv /dt  
kV/µs  
V GS  
Gate source voltage  
±8  
V
Power dissipation 2)  
P tot  
T A=25 °C  
0.5  
W
°C  
T j, T stg  
Operating and storage temperature  
ESD Class  
-55 ... 150  
0 (<250V)  
260 °C  
JESD22-A114 -HBM  
Soldering Temperature  
IEC climatic category; DIN IEC 68-1  
55/150/56  
1) Remark: only one of both transistors in operation.  
Rev 2.4  
page 1  
2014-09-19  

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