Datasheet > BS616UV8011BC

BS616UV8011BC

更新时间： 2024-11-18 22:17:03

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
10页	222K
描述
Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit

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中文翻译

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BS616UV8011BC 数据手册

Ultra Low Power/Voltage CMOS SRAM

512K X 16 bit

BSI

BS616UV8011

DESCRIPTION

FEATURES

The BS616UV8011 is a high performance, ultra low power CMOS Static

Random Access Memory organized as 524,288 words by 16 bits and

operates from a wide range of 1.8V to 2.3V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 0.6uA and maximum access time of 70/100ns in 2V operation.

Easy memory expansion is provided by an active LOW chip enable(CE1),

active HIGH chip enable (CE2), active LOW output enable(OE) and

three-state output drivers.

• Ultra low operation voltage : 1.8 ~ 2.3V

• Ultra low power consumption :

Vcc = 2.0V C-grade: 20mA (Max.) operating current

I-grade : 25mA (Max.) operating current

0.6uA (Typ.) CMOS standby current

• High speed access time :

-70

-10

70ns (Max.) at Vcc=2V

100ns (Max.) at Vcc=2V

The BS616UV8011 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

The BS616UV8011 is available in 48-pin BGA package.

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE2,CE1 and OE options

• I/O Configuration x8/x16 selectable by LB and UB pin

PRODUCT FAMILY

POWER DISSIPATION

SPEED

(ns)

Vcc

RANGE

OPERATING

TEMPERATURE

STANDBY

Operating

PRODUCT FAMILY

PKG TYPE

CCSB1

, Max)

Vcc=2V

70 / 100

Vcc=2V

20mA

BS616UV8011DC

BS616UV8011BC

BS616UV8011FC

BS616UV8011DI

BS616UV8011BI

BS616UV8011FI

DICE

+0^OC to +70^O1.8 ~ 2.3V

15uA

BGA-48 -0810

BGA-48 -0912

DICE

40^OC to +85^OC 1.8 ~ 2.3V

20uA

25mA

70 / 100

BGA-48 -0810

BGA-48 -0912

PIN CONFIGURATIONS

BLOCK DIAGRAM

A17

A16

A15

A14

A13

A12

Address

Input

CE2

2048

Row

Memory Array

2048 x 4096

Buffer

CE1

Decoder

D10

4096

Data

Column I/O

Input

VSS D11

A17

Buffer

VCC

VSS

Write Driver

Sense Amp

256

D12

D13

N.C

A16

A15

A13

A10

Data

VCC

D14

D15

A18

VSS

A14

A12

Output

Buffer

Column Decoder

D15

CE2

CE1

Control

Address Input Buffer

A11 A10 A9 A8 A7

A6 A5 A18

A11

Vcc

Gnd

48-Ball CSP top View

Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.

Revision 2.2

April 2001

R0201-BS616UV8011

12 3 4 5 6 7...10

中文翻译

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与BS616UV8011BC相关器件

型号	品牌	获取价格	描述	数据表
BS616UV8011BI	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616UV8011DC	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616UV8011DI	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616UV8011FC	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616UV8011FI	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616UV8020	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616UV8020BC	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616UV8020BI	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616UV8021	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616UV8021BC	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable

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