Datasheet > BS616UV8021BI

BS616UV8021BI

更新时间： 2024-11-18 22:56:39

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
12页	216K
描述
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable

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中文翻译

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BS616UV8021BI 数据手册

Ultra Low Power/Voltage CMOS SRAM

512K x 16 or 1M x 8 bit switchable

BSI

BS616UV8021

DESCRIPTION

FEATURES

The BS616UV8021 is a high performance, ultra low power CMOS Static

Random Access Memory organized as 524,288 words by 16 bits or

1,048,576 bytes by 8 bits selectable by CIO pin and operates from a wide

range of 1.8V to 2.3V supply voltage.

• Ultra low operation voltage : 1.8 ~ 2.3V

• Ultra low power consumption :

Vcc = 2.0V C-grade: 20mA (Max.) operating current

I-grade : 25mA (Max.) operating current

0.6uA (Typ.) CMOS standby current

• High speed access time :

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 0.6uA and maximum access time of 70/100ns in 2.0V operation.

Easy memory expansion is provided by an active HIGH chip

enable2(CE2), active LOW chip enable1(CE1), active LOW output

enable(OE) and three-state output drivers.

-70

70ns (Max.) at Vcc=2.0V

-10 100ns (Max.) at Vcc=2.0V

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

The BS616UV8021 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE1, CE2 and OE options

• I/O Configuration x8/x16 selectable by CIO, LB and UB pin

The BS616UV8021 is available in DICE form and 48-pin BGA type.

PRODUCT FAMILY

POWER DISSIPATION

SPEED

(ns)

STANDBY

Operating

PRODUCT

FAMILY

OPERATING

Vcc RANGE

PKG TYPE

(ICCSB1, Max)

(ICC, Max)

TEMPERATURE

Vcc=2.0V

BS616UV8021DC

BS616UV8021BC

BS616UV8021FC

BS616UV8021DI

BS616UV8021BI

BS616UV8021FI

DICE

+0 ^OC to +70^O

-40 ^OC to +85^O

1.8V ~ 2.3V

70 / 100

15uA

20mA

BGA-48-0810

BGA-48-0912

DICE

70 / 100

20uA

25mA

BGA-48-0810

BGA-48-0912

BLOCK DIAGRAM

PIN CONFIGURATIONS

A15

A14

A13

A12

A11

A10

Address

Input

CE2

2048

Row

Memory Array

2048 x 4096

Buffer

Decoder

CE1

A17

D10

4096

Data

16(8)

Column I/O

Input

Buffer

D11

D12

D13

A17

Vss

A14

A12

VSS

VCC

VSS

Write Driver

Sense Amp

16(8)

256(512)

Data

A16

VCC

D14

D15

A18

Output

Buffer

Column Decoder

D15

A15

A13

A10

CE1

CE2

16(18)

Control

Address Input Buffer

CI.O

CIO

A16 A0 A1 A2 A3 A4

A5 A18

(SAE)

A11

SAE.

Vdd

Vss

48-Ball CSP top View

Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.

Revision 2.2

April 2001

R0201-BS616UV8021

12 3 4 5 6 7...12

中文翻译

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与BS616UV8021BI相关器件

型号	品牌	获取价格	描述	数据表
BS616UV8021DC	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616UV8021DI	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616UV8021FC	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616UV8021FI	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS62LV1023	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K X 8 bit
BS62LV1023DC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K X 8 bit
BS62LV1023DI	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K X 8 bit
BS62LV1023JC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K X 8 bit
BS62LV1023JC70	BSI	获取价格	Standard SRAM, 128KX8, 70ns, CMOS, PDSO32
BS62LV1023JCG70	BSI	获取价格	Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, SOJ-32

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