Datasheet > BS616UV8020BI

BS616UV8020BI

更新时间： 2024-11-18 22:56:39

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
11页	208K
描述
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable

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中文翻译

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BS616UV8020BI 数据手册

Ultra Low Power/Voltage CMOS SRAM

512K x 16 or 1M x 8 bit switchable

BSI

BS616UV8020

DESCRIPTION

FEATURES

• Ultra low operation voltage : 1.8 ~3.6V

• Ultra low power consumption :

The BS616UV8020 is a high performance, ultra low power CMOS Static

Random Access Memory organized as 524,288 words by 16 bits or

1,048,576 bytes by 8 bits selectable by CIO pin and operates from a wide

range of 1.8V to 3.6V supply voltage.

Vcc = 2.0V C-grade: 15mA (Max.) operating current

I-grade : 20mA (Max.) operating current

0.4uA (Typ.) CMOS standby current

Vcc = 3.0V C-grade: 20mA (Max.) operating current

I-grade : 25mA (Max.) operating current

0.5uA (Typ.) CMOS standby current

• High speed access time :

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 0.4uA and maximum access time of 70/100ns in 2V operation.

Easy memory expansion is provided by an active HIGH chip

enable2(CE2), and active LOW chip enable1(CE1), an active LOW

output enable(OE) and three-state output drivers.

-70

-10

70ns (Max.) at Vcc=2V

100ns (Max.) at Vcc=2V

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

The BS616UV8020 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS616UV8020 is available in 48-pin BGA type.

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE1, CE2 and OE options

• I/O Configuration x8/x16 selectable by CIO, LB and UB pin

PRODUCT FAMILY

POWER DISSIPATION

SPEED

(ns)

STANDBY

Operating

OPERATING

Vcc

PRODUCT FAMILY

PKG TYPE

(ICCSB1, Max)

(ICC, Max)

TEMPERATURE

RANGE

Vcc=2 V

Vcc=2V

Vcc=3V

Vcc=2V

Vcc=3V

BS616UV8020BC

BS616UV8020BI

+0 ^OC to +70^O

-40 ^OC to +85^O

1.8V ~ 3.6V

70 / 100

2uA

4uA

3uA

6uA

15mA

20mA

25mA

BGA-48-0810

BLOCK DIAGRAM

PIN CONFIGURATIONS

A15

A14

A13

A12

A11

A10

Address

Input

CE2

2048

Row

Decoder

Memory Array

2048 x 4096

Buffer

D10

D11

D12

D13

CI.O

CE1

A17

4096

Data

16(8)

Column I/O

Input

A17

Buffer

VSS

VCC

VSS

Write Driver

Sense Amp

16(8)

256(512)

Column Decoder

Data

VSS A16

VCC

D14

Output

Buffer

D15

A14

A12

A15

A13

A10

CE1

CE2

16(18)

Control

Address Input Buffer

D15

A18

CIO

A16 A0 A1 A2 A3 A4

A5 A18

(SAE)

A11

SAE.

Vdd

Vss

48-Ball CSP top View

Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.

Revision 2.4

April 2002

R0201-BS616UV8020

12 3 4 5 6 7...11

中文翻译

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与BS616UV8020BI相关器件

型号	品牌	获取价格	描述	数据表
BS616UV8021	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616UV8021BC	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616UV8021BI	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616UV8021DC	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616UV8021DI	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616UV8021FC	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616UV8021FI	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS62LV1023	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K X 8 bit
BS62LV1023DC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K X 8 bit
BS62LV1023DI	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K X 8 bit

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