Datasheet > BS616LV8021AI

BS616LV8021AI

更新时间： 2024-11-12 23:04:27

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
11页	206K
描述
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable

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BS616LV8021AI 数据手册

Very Low Power/Voltage CMOS SRAM

512K x 16 or 1M x 8 bit switchable

BSI

BS616LV8021

DESCRIPTION

FEATURES

The BS616LV8021 is a high performance, very low power CMOS Static

Random Access Memory organized as 524,288 words by 16 bits or

1,048,576 bytes by 8 bits selectable by CIO pin and operates from

a wide range of 2.7V to 3.6V supply voltage.

• Very low operation voltage : 2.7 ~ 3.6V

• Very low power consumption :

Vcc = 3.0V C-grade: 20mA (Max.) operating current

I-grade : 25mA (Max.) operating current

1uA (Typ.) CMOS standby current

• High speed access time :

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 1uA and maximum access time of 70/100ns in 3.0V operation.

Easy memory expansion is provided by an active HIGH chip

enable2(CE2), active LOW chip enable1(CE1), active LOW output

enable(OE) and three-state output drivers.

-70

70ns (Max.) at Vcc=3.0V

-10 100ns (Max.) at Vcc=3.0V

•Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

The BS616LV8021 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE1, CE2 and OE options

• I/O Configuration x8/x16 selectable by CIO, LB and UB pin

The BS616LV8021 is available in 48-pin BGA type.

PRODUCT FAMILY

POWER DISSIPATION

SPEED

STANDBY

Operating

PRODUCT

FAMILY

OPERATING

Vcc

(ns)

(ICCSB1, Max)

(ICC, Max)

PKG TYPE

TEMPERATURE

RANGE

Vcc=3.0V

16uA

Vcc=3.0V

20mA

BS616LV8021AC

BS616LV8021AI

+0 ^OC to +70 ^O

-40 ^OC to +85 ^O

2.7V ~ 3.6V

70 / 100

BGA-48-0608

24uA

25mA

BLOCK DIAGRAM

PIN CONFIGURATIONS

A15

A14

A13

A12

A11

A10

Address

Input

CE2

2048

Row

Decoder

Memory Array

2048 x 4096

Buffer

D10

D11

CE1

A17

4096

Data

16(8)

Column I/O

Input

A17

Buffer

VSS

VCC

VSS

Write Driver

Sense Amp

16(8)

256(512)

Data

A16

A 15

A13

A10

VCC D12

VSS

A14

A12

Output

Buffer

Column Decoder

D15

D14

D15

A18

D13

CI.O

CE1

CE2

16(18)

Control

Address Input Buffer

CIO

A16 A0 A1 A2 A3 A4

A5 A18

(SAE)

A11 SAE.

Vdd

Vss

48-Ball CSP top View

Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.

Revision 2.3

April 2002

R0201-BS616LV8021

12 3 4 5 6 7...11

中文翻译

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与BS616LV8021AI相关器件

型号	品牌	获取价格	描述	数据表
BS616LV8022	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616LV8022BC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616LV8022BI	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616LV8023	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616LV8023BC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616LV8023BI	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616LV8025	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616LV8025BC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616LV8025BI	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616UV1010	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit

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