Datasheet > BS616LV8022BI

BS616LV8022BI

更新时间： 2024-09-24 23:04:27

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
11页	211K
描述
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable

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中文翻译

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BS616LV8022BI 数据手册

Very Low Power/Voltage CMOS SRAM

512K x 16 or 1M x 8 bit switchable

BSI

BS616LV8022

FEATURES

DESCRIPTION

• Very low operation voltage : 2.4 ~ 5.5V

• Very low power consumption :

The BS616LV8022 is a high performance, very low power CMOS Static

Random Access Memory organized as 524,288 words by 16 bits or

1,048,576 bytes by 8 bits selectable by CIO pin and operates from a wide

range of 2.4V to 5.5V supply voltage.

Vcc = 3.0V C-grade: 20mA (Max.) operating current

I-grade : 25mA (Max.) operating current

0.5uA (Typ.) CMOS standby current

Vcc = 5.0V C-grade: 45mA (Max.) operating current

I-grade : 50mA (Max.) operating current

3uA (Typ.) CMOS standby current

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 0.5uA and maximum access time of 70/100ns in 3.0V operation.

Easy memory expansion is provided by an active HIGH chip

enable2(CE2), active LOW chip enable1(CE1), active LOW output

enable(OE) and three-state output drivers.

• High speed access time :

-70

70ns (Max.) at Vcc= 3.0V

-10 100ns (Max.) at Vcc= 3.0V

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

The BS616LV8022 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS616LV8022 is available in 48-pin BGA type.

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE1, CE2 and OE options

• I/O Configuration x8/x16 selectable by CIO, LB and UB pin

PRODUCT FAMILY

POWER DISSIPATION

SPEED

(ns)

STANDBY

Operating

PRODUCT

FAMILY

OPERATING

Vcc

PKG TYPE

(ICCSB1, Max)

(ICC, Max)

TEMPERATURE

RANGE

Vcc=3.0V

Vcc=3V

3uA

Vcc=5V Vcc=3V Vcc=5V

BS616LV8022BC +0^OC to +70^OC 2.4V ~ 5.5V 70 / 100

BS616LV8022BI -40^OC to +85^OC 2.4V ~ 5.5V 70 / 100

30uA

20mA 45mA

25mA 50mA

BGA-48-0810

6uA

100uA

BLOCK DIAGRAM

PIN CONFIGURATIONS

A15

A14

A13

A12

A11

A10

Address

Input

CE2

CE1

2048

Row

Memory Array

2048 x 4096

Buffer

Decoder

A17

D10

D11

D12

4096

Data

16(8)

Column I/O

Input

A17

Buffer

VSS

VCC

D14

VCC

VSS

Write Driver

Sense Amp

16(8)

256(512)

Data

A16

A15

A13

A10

VSS

A14

A12

Output

Buffer

Column Decoder

D15

D13

CE1

CE2

16(18)

D15 CI.O

Control

Address Input Buffer

CIO

A16 A0 A1 A2 A3 A4

A5 A18

(SAE)

A18

A11 SAE.

Vdd

Vss

48-Ball CSP top View

Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.

Revision 2.4

April 2002

R0201-BS616LV8022

12 3 4 5 6 7...11

中文翻译

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与BS616LV8022BI相关器件

型号	品牌	获取价格	描述	数据表
BS616LV8023	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616LV8023BC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616LV8023BI	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616LV8025	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616LV8025BC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616LV8025BI	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
BS616UV1010	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit
BS616UV1010_06	BSI	获取价格	Ultra Low Power CMOS SRAM 64K X 16 bit
BS616UV1010_08	BSI	获取价格	Ultra Low Power CMOS SRAM 64K X 16 bit
BS616UV1010AC	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit

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