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BS616LV8022BC PDF预览

BS616LV8022BC

更新时间： 2024-11-12 23:04:27
品牌 Logo 应用领域
BSI 静态存储器
页数 文件大小 规格书
11页 211K
描述
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable

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中文翻译

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BS616LV8022BC 数据手册

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Very Low Power/Voltage CMOS SRAM  
512K x 16 or 1M x 8 bit switchable  
BSI  
BS616LV8022  
„ FEATURES  
„ DESCRIPTION  
• Very low operation voltage : 2.4 ~ 5.5V  
• Very low power consumption :  
The BS616LV8022 is a high performance, very low power CMOS Static  
Random Access Memory organized as 524,288 words by 16 bits or  
1,048,576 bytes by 8 bits selectable by CIO pin and operates from a wide  
range of 2.4V to 5.5V supply voltage.  
Vcc = 3.0V C-grade: 20mA (Max.) operating current  
I-grade : 25mA (Max.) operating current  
0.5uA (Typ.) CMOS standby current  
Vcc = 5.0V C-grade: 45mA (Max.) operating current  
I-grade : 50mA (Max.) operating current  
3uA (Typ.) CMOS standby current  
Advanced CMOS technology and circuit techniques provide both high  
speed and low power features with a typical CMOS standby current  
of 0.5uA and maximum access time of 70/100ns in 3.0V operation.  
Easy memory expansion is provided by an active HIGH chip  
enable2(CE2), active LOW chip enable1(CE1), active LOW output  
enable(OE) and three-state output drivers.  
• High speed access time :  
-70  
70ns (Max.) at Vcc= 3.0V  
-10 100ns (Max.) at Vcc= 3.0V  
• Automatic power down when chip is deselected  
• Three state outputs and TTL compatible  
• Fully static operation  
The BS616LV8022 has an automatic power down feature, reducing the  
power consumption significantly when chip is deselected.  
The BS616LV8022 is available in 48-pin BGA type.  
• Data retention supply voltage as low as 1.5V  
• Easy expansion with CE1, CE2 and OE options  
• I/O Configuration x8/x16 selectable by CIO, LB and UB pin  
„ PRODUCT FAMILY  
POWER DISSIPATION  
SPEED  
(ns)  
STANDBY  
Operating  
PRODUCT  
FAMILY  
OPERATING  
Vcc  
PKG TYPE  
(ICCSB1, Max)  
(ICC, Max)  
TEMPERATURE  
RANGE  
Vcc=3.0V  
Vcc=3V  
3uA  
Vcc=5V Vcc=3V Vcc=5V  
BS616LV8022BC +0OC to +70OC 2.4V ~ 5.5V 70 / 100  
BS616LV8022BI -40OC to +85OC 2.4V ~ 5.5V 70 / 100  
30uA  
20mA 45mA  
25mA 50mA  
BGA-48-0810  
BGA-48-0810  
6uA  
100uA  
„ BLOCK DIAGRAM  
„ PIN CONFIGURATIONS  
A15  
A14  
A13  
1
2
3
4
5
6
A12  
A11  
A10  
A9  
Address  
Input  
A
B
C
D
E
F
CE2  
D0  
LB  
D8  
OE  
UB  
A0  
A3  
A1  
A4  
A2  
CE1  
D1  
22  
2048  
Row  
Memory Array  
2048 x 4096  
Buffer  
A8  
Decoder  
A17  
A7  
A6  
D9  
A5  
A6  
D2  
D10  
D11  
D12  
4096  
Data  
16(8)  
16(8)  
Column I/O  
Input  
D0  
A17  
A7  
D3  
D4  
D5  
Buffer  
VSS  
VCC  
D14  
VCC  
VSS  
D6  
.
.
.
.
.
.
.
.
Write Driver  
Sense Amp  
16(8)  
16(8)  
256(512)  
Data  
A16  
A15  
A13  
A10  
VSS  
A14  
A12  
A9  
Output  
Buffer  
Column Decoder  
D15  
D13  
CE1  
CE2  
WE  
OE  
UB  
16(18)  
D15 CI.O  
A8  
D7  
Control  
Address Input Buffer  
G
H
WE  
LB  
CIO  
A16 A0 A1 A2 A3 A4  
A5 A18  
(SAE)  
A18  
A11 SAE.  
Vdd  
Vss  
48-Ball CSP top View  
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.  
Revision 2.4  
April 2002  
R0201-BS616LV8022  
1
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