Datasheet > BS616LV8018FI-70

BS616LV8018FI-70

更新时间： 2024-11-12 22:24:39

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
8页	255K
描述
Very Low Power/Voltage CMOS SRAM 512K X 16 bit

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中文翻译

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数据手册

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BS616LV8018FI-70 数据手册

Very Low Power/Voltage CMOS SRAM

512K X 16 bit

(Dual CE Pins)

BSI

BS616LV8018

FEATURES

DESCRIPTION

The BS616LV8018 is a high performance, very low power CMOS Static

Random Access Memory organized as 524,288 words by 16 bits and

operates from a range of 4.5V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 8.0uA at 5V/25^oC and maximum access time of 55ns at 5.0V/85^oC.

Easy memory expansion is provided by an active LOW chip enable(CE1)

, active HIGH chip enable (CE2), active LOW output enable(OE) and

three-state output drivers.

• Vcc operation voltage : 4.5~5.5V

• Very low power consumption :

Vcc = 5.0V C-grade: 75mA (@55ns) operating current

I -grade: 76mA (@55ns) operating current

C-grade: 60mA (@70ns) operating current

I -grade: 61mA (@70ns) operating current

8.0uA (Typ.) CMOS standby current

• High speed access time :

-55

The BS616LV8018 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS616LV8018 is available in 48-pin BGA package.

-70

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE2,CE1 and OE options

• I/O Configuration x8/x16 selectable by LB and UB pin

PRODUCT FAMILY

POWER DISSIPATION

SPEED

(ns)

STANDBY

Operating

OPERATING

TEMPERATURE

Vcc

RANGE

(ICCSB1, Max)

(ICC, Max)

PRODUCT FAMILY

PKG TYPE

55ns : 4.5~5.5V

70ns : 4.5~5.5V

Vcc=5V

70ns

Vcc=5V

55uA

55ns

BS616LV8018FC

BS616LV8018FI

+0 ^OC to +70^O

-40^OC to +85^O

4.5V ~ 5.5V

55 / 70

75mA

60mA

61mA

BGA-48-0912

110

76mA

PIN CONFIGURATIONS

BLOCK DIAGRAM

Address

Input

CE2

2048

A17

A16

Row

Decoder

Memory Array

2048 x 4096

Buffer

CE1

A15

A14

A13

A12

D10

4096

Data

Input

Buffer

Column I/O

VSS D11

VCC D12

A17

VCC

Write Driver

Sense Amp

256

A16

A15

A13

A10

Data

Output

Buffer

VSS

A14

VSS

Column Decoder

D15

D14

D15

A18

D13

CE2

CE1

A11

A12

N.C

Control

Address Input Buffer

A11 A10 A9 A8 A7

A6 A5 A18

Vcc

Vss

48-Ball CSP top View

Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.

Revision 2.1

R0201-BS616LV8018

Jan.

2004

12 3 4 5 6 7 8

中文翻译

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与BS616LV8018FI-70相关器件

型号	品牌	获取价格	描述	数据表
BS616LV8018FIG55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8018FIG70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8018FIP55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8018FIP70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8019	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8019EC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8019EC55	BSI	获取价格	Standard SRAM, 512KX16, 55ns, CMOS, PDSO44
BS616LV8019EC-55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8019EC70	BSI	获取价格	Standard SRAM, 512KX16, 70ns, CMOS, PDSO44
BS616LV8019EC-70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 16 bit

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