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BS616LV8017FI-70 PDF预览

BS616LV8017FI-70

更新时间： 2024-11-12 22:22:47
品牌 Logo 应用领域
BSI 静态存储器
页数 文件大小 规格书
9页 273K
描述
Very Low Power/Voltage CMOS SRAM 512K X 16 bit

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中文翻译

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BS616LV8017FI-70 数据手册

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Very Low Power/Voltage CMOS SRAM  
512K X 16 bit  
(Single CE Pin)  
BSI  
BS616LV8017  
„ FEATURES  
• Fully static operation  
• Data retention supply voltage as low as 1.5V  
• Easy expansion with CE and OE options  
• Wide Vcc operation voltage : 2.4~5.5V  
• Very low power consumption :  
Vcc = 3.0V C-grade: 30mA (@55ns) operating current  
I -grade: 31mA (@55ns) operating current  
C-grade: 24mA (@70ns) operating current  
I -grade: 25mA (@70ns) operating current  
1.5uA (Typ.) CMOS standby current  
Vcc = 5.0V C-grade: 75mA (@55ns) operating current  
I -grade: 76mA (@55ns) operating current  
C-grade: 60mA (@70ns) operating current  
I -grade: 61mA (@70ns) operating current  
8.0uA (Typ.) CMOS standby current  
• I/O Configuration x8/x16 selectable by LB and UB pin  
„ DESCRIPTION  
The BS616LV8017 is a high performance, very low power CMOS Static  
Random Access Memory organized as 524,288 words by 16 bits and  
operates from a wide range of 2.4V to 5.5V supply voltage.  
Advanced CMOS technology and circuit techniques provide both high  
speed and low power features with a typical CMOS standby current  
of 1.5uA at 3V/25oC and maximum access time of 55ns at 3.0V/85oC.  
Easy memory expansion is provided by an active LOW chip enable (CE)  
,active LOW output enable(OE) and three-state output drivers.  
• High speed access time :  
-55  
-70  
55ns  
70ns  
The BS616LV8017 has an automatic power down feature, reducing the  
power consumption significantly when chip is deselected.  
The BS616LV8017 is available in 48B BGA and 44L TSOP2 packages.  
• Automatic power down when chip is deselected  
• Three state outputs and TTL compatible  
„ PRODUCT FAMILY  
POWER DISSIPATION  
SPEED  
( ns )  
STANDBY  
Operating  
PRODUCT  
FAMILY  
OPERATING  
TEMPERATURE  
Vcc  
RANGE  
( ICCSB1, Max )  
( ICC, Max )  
PKG TYPE  
Vcc=5V  
70ns  
Vcc=3V  
70ns  
55ns : 3.0~5.5V  
70ns : 2.7~5.5V  
Vcc=3V  
Vcc=5V  
BS616LV8017EC  
BS616LV8017FC  
BS616LV8017EI  
BS616LV8017FI  
TSOP2-44  
BGA-48-0912  
TSOP2-44  
+0O C to +70OC 2.4V ~ 5.5V  
-40OC to +85OC 2.4V ~ 5.5V  
55 / 70  
55 / 70  
5uA  
55uA  
24mA  
25mA  
60mA  
10uA  
110uA  
61mA  
BGA-48-0912  
„ PIN CONFIGURATIONS  
„ BLOCK DIAGRAM  
1
2
3
4
5
6
7
8
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
A4  
A3  
A2  
A1  
A0  
CE  
DQ0  
DQ1  
A5  
A6  
A7  
OE  
UB  
LB  
DQ15  
DQ14  
DQ13  
DQ12  
Vss  
A4  
A3  
A2  
A1  
A0  
Address  
Input  
22  
2048  
9
DQ2  
DQ3  
Vcc  
A17  
A16  
Row  
Memory Array  
2048 x 4096  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
BS616LV8017EC  
BS616LV8017EI  
Buffer  
Vss  
Vcc  
A15  
A14  
A13  
A12  
Decoder  
DQ4  
DQ5  
DQ6  
DQ7  
WE  
A18  
A17  
A16  
A15  
A14  
DQ11  
DQ10  
DQ9  
DQ8  
A8  
4096  
A9  
A10  
A11  
A12  
A13  
Data  
Input  
16  
16  
Column I/O  
D0  
Buffer  
.
.
.
.
.
.
.
.
Write Driver  
Sense Amp  
1
2
3
4
6
16  
5
A2  
256  
Data  
Output  
16  
LB  
OE  
A0  
A1  
NC  
A
B
C
D
E
F
Buffer  
Column Decoder  
D15  
D8  
D9  
UB  
A3  
A5  
A4  
A6  
A7  
CE  
D1  
D3  
D0  
D2  
D10  
D11  
16  
CE  
V
A17  
V
CC  
SS  
SS  
CC  
WE  
OE  
UB  
Control  
Address Input Buffer  
A16  
A 15  
A13  
A10  
D4  
D5  
VSS  
A14  
A12  
A9  
V
V
D12  
D13  
D6  
D14  
D15  
A18  
LB  
A11 A10 A9 A8 A7  
A6 A5 A18  
WE  
A11  
D7  
N.C  
A8  
Vcc  
Vss  
G
H
NC  
48-Ball CSP top View  
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.  
Revision 2.1  
R0201-BS616LV8017  
1
Jan.  
2004  
1234567...9

中文翻译

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