5秒后页面跳转
BR93G66FVM-3GTTR PDF预览

BR93G66FVM-3GTTR

更新时间: 2024-09-20 00:48:51
品牌 Logo 应用领域
罗姆 - ROHM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
40页 1220K
描述
MicroWire BUS EEPROM (3-Wire)

BR93G66FVM-3GTTR 数据手册

 浏览型号BR93G66FVM-3GTTR的Datasheet PDF文件第2页浏览型号BR93G66FVM-3GTTR的Datasheet PDF文件第3页浏览型号BR93G66FVM-3GTTR的Datasheet PDF文件第4页浏览型号BR93G66FVM-3GTTR的Datasheet PDF文件第5页浏览型号BR93G66FVM-3GTTR的Datasheet PDF文件第6页浏览型号BR93G66FVM-3GTTR的Datasheet PDF文件第7页 
Datasheet  
Serial EEPROM series Standard EEPROM  
MicroWire BUS EEPROM (3-Wire)  
BR93G66-3  
General Description  
BR93G66-3 is serial EEPROM of Serial 3-Line Interface Method.  
They are dual organization (by 16bit or 8bit) and it is selected by the input of ORG PIN.  
Features  
Packages W(Typ) x D(Typ)x H(Max)  
3-Line Communications of chip select, serial clock,  
serial data input / output (the case where input and  
output are shared)  
Operations available at High Speed 3MHz clock  
(4.5V to 5.5V)  
High Speed Write available (Write Time 5ms Max)  
DIP-T8  
9.30mm x 6.50mm x 7.10mm  
TSSOP-B8  
3.00mm x 6.40mm x 1.20mm  
Same package and pin configuration from 1Kbit to  
16Kbit  
1.7V to 5.5V Single Power Source Operation  
Address Auto Increment Function at Read  
Operation  
SOP8  
TSSOP-B8J  
3.00mm x 4.90mm x 1.10mm  
5.00mm x 6.20mm x 1.71mm  
Prevention of Write Error  
» Write Prohibition at Power On  
» Write Prohibition by Command Code  
» Prevention of Write Error at Low Voltage  
Self-Timed Programming Cycle  
Program Condition Display by READY / BUSY  
Dual Organization: by 16 bit (X16) or 8 bit (X8)  
Compact Package  
SOP- J8  
4.90mm x 6.00mm x 1.65mm  
MSOP8  
2.90mm x 4.00mm x 0.90mm  
SOP8 SOP-J8 SSOP-B8 TSSOP-B8 MSOP8  
TSSOP-B8J DIP-T8 VSON008X2030  
More than 40 years data retention  
More than 1 million Write Cycles  
Initial Delivery State all addresses FFFFh (X16) or  
FFh (X8)  
SSOP-B8  
3.00mm x 6.40mm x 1.35mm  
VSON008X2030  
2.00mm x 3.00mm x 0.60mm  
BR93G66-3  
Power Source  
Voltage  
VSON008  
X2030  
DIP-T8(1) SOP8 SOP-J8 SSOP-B8 TSSOP-B8 TSSOP-B8J MSOP8  
Capacity  
Bit Format  
Type  
4Kbit  
256×16 or 512×8 BR93G66-3  
1.7V to 5.5V  
(1) DIP-T8 is not halogen free package  
Product structureSilicon monolithic integrated circuit This product has no designed protection against radioactive rays  
www.rohm.com  
© 2013 ROHM Co., Ltd. All rights reserved.  
TSZ2211114001  
TSZ02201-09190G100040-1-2  
15.Jun.2016 REV.003  
1/36  

与BR93G66FVM-3GTTR相关器件

型号 品牌 获取价格 描述 数据表
BR93G66FVT-3 ROHM

获取价格

MicroWire BUS EEPROM (3-Wire)
BR93G66FVT-3A ROHM

获取价格

MicroWire BUS EEPROM (3-Wire)
BR93G66FVT-3B ROHM

获取价格

MicroWire BUS EEPROM (3-Wire)
BR93G66FVT-3GE2 ROHM

获取价格

MicroWire BUS EEPROM (3-Wire)
BR93G66NUX-3 ROHM

获取价格

MicroWire BUS EEPROM (3-Wire)
BR93G66NUX-3A ROHM

获取价格

MicroWire BUS EEPROM (3-Wire)
BR93G66NUX-3B ROHM

获取价格

MicroWire BUS EEPROM (3-Wire)
BR93G66NUX-3TTR ROHM

获取价格

MicroWire BUS EEPROM (3-Wire)
BR93G76-3 ROHM

获取价格

Serial EEPROM series Standard EEPROM MicroWire BUS EEPROM (3-Wire)
BR93G76-3A ROHM

获取价格

Serial EEPROM series Standard EEPROM MicroWire BUS EEPROM (3-Wire)