5秒后页面跳转
BR5008 PDF预览

BR5008

更新时间: 2024-11-20 22:27:51
品牌 Logo 应用领域
EIC 整流二极管桥式整流二极管局域网
页数 文件大小 规格书
2页 68K
描述
SILICON BRIDGE RECTIFIERS

BR5008 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:compliant
风险等级:5.67Is Samacsys:N
配置:BRIDGE, 4 ELEMENTS二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.1 V最大非重复峰值正向电流:400 A
元件数量:4最大输出电流:50 A
最大重复峰值反向电压:800 V子类别:Bridge Rectifier Diodes
表面贴装:NOBase Number Matches:1

BR5008 数据手册

 浏览型号BR5008的Datasheet PDF文件第2页 
ELECTRONICS INDUSTRY (USA) CO., LTD.  
103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND  
TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com  
SILICON BRIDGE RECTIFIERS  
BR5000 - BR5010  
BR50  
PRV : 50 - 1000 Volts  
Io : 50 Amperes  
0.728(18.50)  
0.688(17.40)  
FEATURES :  
0.570(14.50)  
0.530(13.40)  
1.130(28.70)  
0.685(16.70)  
0.618(15.70)  
* High case dielectric strength  
* High surge current capability  
* High reliability  
1.120(28.40)  
* High efficiency  
* Low reverse current  
* Low forward voltage drop  
0.210(5.30)  
0.200(5.10)  
0.658(16.70)  
0.618(15.70)  
0.032(0.81)  
0.028(0.71)  
0.252(6.40)  
0.248(6.30)  
f
MECHANICAL DATA :  
0.100(2.50)  
0.090(2.30)  
0.905(23.0)  
* Case : Molded plastic with heatsink integrally  
mounted in the bridge encapsulation  
* Epoxy : UL94V-O rate flame retardant  
* Terminals : plated .25" (6.35 mm). Faston  
* Polarity : Polarity symbols marked on case  
* Mounting position : Bolt down on heat-sink with  
silicone thermal compound between bridge  
and mounting surface for maximum heat  
transfer efficiency.  
0.826(21.0)  
0.310(7.87)  
0.280(7.11)  
Metal Heatsink  
Dimensions in inches and ( millimeters )  
* Weight : 17.1 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
SYMBOL  
BR5000  
BR5001  
BR5002  
BR5004  
BR5006  
BR5008  
BR5010  
RATING  
UNIT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
50  
600  
420  
600  
800  
560  
800  
1000  
700  
Volts  
Volts  
Maximum DC Blocking Voltage  
100  
1000  
Volts  
IF(AV)  
Amps.  
Maximum Average Forward Current Tc = 55°C  
Peak Forward Surge Current Single half sine wave  
Superimposed on rated load (JEDEC Method)  
Current Squared Time at t < 8.3 ms.  
IFSM  
I2t  
500  
Amps.  
A2S  
660  
1.1  
Maximum Forward Voltage per Diode at IF=25 Amp.  
VF  
Volts  
IR  
10  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Typical Thermal Resistance (Note 1)  
Ta = 25 °C  
mA  
mA  
IR(H)  
200  
Ta = 100 °C  
1.0  
°C/W  
°C  
RqJC  
TJ  
Operating Junction Temperature Range  
Storage Temperature Range  
- 40 to + 150  
- 40 to + 150  
TSTG  
°C  
Notes :  
1 ) Thermal resistance from Junction to Case with units mounted on a 9"x5"x4.6" (22.9x12.7x11.7 cm) Al-Finned Heatsink.  
UPDATE : JUNE 2, 1999  

与BR5008相关器件

型号 品牌 获取价格 描述 数据表
BR5008G EIC

获取价格

暂无描述
BR5008-G COMCHIP

获取价格

Silicon Bridge Rectifiers
BR5008GW EIC

获取价格

Bridge Rectifier Diode, 50A, 800V V(RRM),
BR5008L ASEMI

获取价格

【ASEMI】KBPC5008W与BR5008L型号参数区别 上传者:DD
BR5008L YANGJIE

获取价格

BR-L
BR5008W EIC

获取价格

SILICON BRIDGE RECTIFIERS
BR5008W HY

获取价格

Bridge Rectifier Diode
BR501 DCCOM

获取价格

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
BR501 MIC

获取价格

SINGLE-PHASE BRIDGE RECTIFIER
BR5010 MIC

获取价格

SINGLE-PHASE BRIDGE RECTIFIER