BR5008W

更新时间： 2024-01-31 02:41:42

品牌	Logo	应用领域
EIC		整流二极管桥式整流二极管局域网
页数	文件大小	规格书
3页	68K
描述
SILICON BRIDGE RECTIFIERS

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技术参数
数据手册

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BR5008W 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.67
二极管类型：	BRIDGE RECTIFIER DIODE	Base Number Matches：	1

BR5008W 数据手册

ELECTRONICS INDUSTRY (USA) CO., LTD.

103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND

TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com

SILICON BRIDGE RECTIFIERS

BR50W

BR5000W - BR5010W

PRV : 50 - 1000 Volts

Io : 50 Amperes

0.732 (18.6)

0.692 (17.5)

FEATURES :

* High current capability

* High surge current capability

* High reliability

1.130 (28.7)

1.120 (28.4)

0.470 (11.9)

0.430 (10.9)

* Low reverse current

* Low forward voltage drop

* High case dielectric strength

0.21 (5.3)

0.20 (5.1)

MECHANICAL DATA :

0.042 (1.06)

0.038 (0.96)

* Case : Molded plastic with heatsink integrally

mounted in the bridge encapsulation

* Epoxy : UL94V-O rate flame retardant

* Terminals : Plated lead solderable per

MIL-STD-202, Method 208 guaranteed

* Polarity : Polarity symbols marked on case

* Mounting position : Bolt down on heat-sink

with silicone thermal compound between

bridge and mounting surface for maximum

heat transfer efficiency

1.2 (30.5)

MIN.

0.310 (7.87)

0.280(7.11)

Dimensions in inches and ( millimeters )

* Weight : 15.95 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL

BR 5000W

BR 5001W

BR 5002W

BR 5004W

BR 5006W

BR 5008W

BR 5010W

UNIT

RATING

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Volts

Maximum DC Blocking Voltage

100

1000

Volts

IF(AV)

Amps.

Maximum Average Forward Current Tc=55°C

Peak Forward Surge Current Single half sine wave

Superimposed on rated load (JEDEC Method)

Current Squared Time at t < 8.3 ms.

IFSM

400

Amps.

I²t

A²S

Volts

664

1.1

Maximum Forward Voltage per Diode at IF = 25 Amps.

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Ta = 25 °C

IR(H)

200

Ta = 100 °C

Typical Thermal Resistance at Junction to Case ( Note 1 )

Operating Junction Temperature Range

Storage Temperature Range

1.0

°C/W

°C

RqJC

- 40 to + 150

TSTG

°C

Notes :

1 ) Thermal resistance from Junction to Case with units mounted on heat sink.

UPDATE : APRIL 21, 1998

12 3

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