BR5006

更新时间： 2024-02-10 16:33:44

品牌	Logo	应用领域
EIC		二极管
页数	文件大小	规格书
2页	68K
描述
SILICON BRIDGE RECTIFIERS

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中文翻译

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技术参数
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BR5006 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.66
二极管类型：	BRIDGE RECTIFIER DIODE	Base Number Matches：	1

BR5006 数据手册

ELECTRONICS INDUSTRY (USA) CO., LTD.

103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND

TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com

SILICON BRIDGE RECTIFIERS

BR5000 - BR5010

BR50

PRV : 50 - 1000 Volts

Io : 50 Amperes

0.728(18.50)

0.688(17.40)

FEATURES :

0.570(14.50)

0.530(13.40)

1.130(28.70)

0.685(16.70)

0.618(15.70)

* High case dielectric strength

* High surge current capability

* High reliability

1.120(28.40)

* High efficiency

* Low reverse current

* Low forward voltage drop

0.210(5.30)

0.200(5.10)

0.658(16.70)

0.618(15.70)

0.032(0.81)

0.028(0.71)

0.252(6.40)

0.248(6.30)

MECHANICAL DATA :

0.100(2.50)

0.090(2.30)

0.905(23.0)

* Case : Molded plastic with heatsink integrally

mounted in the bridge encapsulation

* Epoxy : UL94V-O rate flame retardant

* Terminals : plated .25" (6.35 mm). Faston

* Polarity : Polarity symbols marked on case

* Mounting position : Bolt down on heat-sink with

silicone thermal compound between bridge

and mounting surface for maximum heat

transfer efficiency.

0.826(21.0)

0.310(7.87)

0.280(7.11)

Metal Heatsink

Dimensions in inches and ( millimeters )

* Weight : 17.1 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL

BR5000

BR5001

BR5002

BR5004

BR5006

BR5008

BR5010

RATING

UNIT

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Volts

Maximum DC Blocking Voltage

100

1000

Volts

IF(AV)

Amps.

Maximum Average Forward Current Tc = 55°C

Peak Forward Surge Current Single half sine wave

Superimposed on rated load (JEDEC Method)

Current Squared Time at t < 8.3 ms.

IFSM

I²t

500

Amps.

A²S

660

1.1

Maximum Forward Voltage per Diode at IF=25 Amp.

Volts

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Typical Thermal Resistance (Note 1)

Ta = 25 °C

IR(H)

200

Ta = 100 °C

1.0

°C/W

°C

RqJC

Operating Junction Temperature Range

Storage Temperature Range

- 40 to + 150

TSTG

°C

Notes :

1 ) Thermal resistance from Junction to Case with units mounted on a 9"x5"x4.6" (22.9x12.7x11.7 cm) Al-Finned Heatsink.

UPDATE : JUNE 2, 1999

中文翻译

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与BR5006相关器件

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BR5006G	EIC	获取价格	Bridge Rectifier Diode, 50A, 600V V(RRM),
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BR5006GW	EIC	获取价格	Bridge Rectifier Diode, 50A, 600V V(RRM),
BR5006L	YANGJIE	获取价格	BR-L
BR5006W	EIC	获取价格	SILICON BRIDGE RECTIFIERS
BR5008	EIC	获取价格	SILICON BRIDGE RECTIFIERS
BR5008	HY	获取价格	SILICON BRIDGE RECTIFIERS
BR5008	SECOS	获取价格	AMP Silicon Bridge Rectifiers
BR5008	EDAL	获取价格	Silicon Bridge Rectifiers 50 Amps
BR5008	SYNSEMI	获取价格	SILICON BRIDGE RECTIFIERS

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