Philips Semiconductors
Preliminary specification
Breakover diodes
BR211SM series
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
1
VTM
On-state voltage
ITM = 2 A
-
-
2.5
V
V(BR)
V(BO)
Avalanche voltage (min)
Breakover voltage (max)
I(BR) = 10mA
I ≤ IS, tp = 100 µs
BR211SM-140
BR211SM-160
BR211SM-180
BR211SM-200
BR211SM-220
BR211SM-240
BR211SM-260
BR211SM-280
123
140
158
176
193
211
228
246
-
140
160
180
200
220
240
260
280
+0.1
-
157
180
202
224
247
269
292
314
-
V
V
V
V
V
V
V
V
S(br)
2
Temperature coefficient of V(BR)
Holding current
%/K
mA
mA
mA
µA
IH
Tj = 25˚C
150
100
10
-
-
Tj = 70˚C
-
3
IS4
Switching current
Off-state current
tp = 100 µs
200
-
1000
10
ID
VD = 85% V(BR)min, Tj = 70˚C
-
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dVD/dt
Linear rate of rise of off-state
voltage that will not trigger any
device
V(DM) = 85% V(BR)min; Tj = 70 ˚C
-
-
2000 V/µs
Cj
Off-state capacitance
VD = 0 V; f = 1 kHz to 1 MHz
-
-
100 pF
VT
current
current
IT
ITSM
100%
90%
IS
IH
V(BR)
I(BR)
V(BO)
ID
50%
30%
voltage
VD
0
time
Symbol
10us
700us
Symmetric BOD
Fig.1. Definition of breakover diode characteristics.
Fig.2. Test waveform for high voltage impulse (ITSM1
)
according to CCITT vol IX-Rec K17.
1 Measured under pulsed conditions to avoid excessive dissipation
2 The minimum current at which the diode will remain in the on-state
3 The avalanche current required to switch the diode to the on-state
4 Measured at maximum recommended continuous voltage. Relative humidity < 65%.
August 1996
2
Rev 1.100