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BR211SM-160 PDF预览

BR211SM-160

更新时间: 2024-01-13 23:38:39
品牌 Logo 应用领域
恩智浦 - NXP 触发装置二极管击穿二极管光电二极管
页数 文件大小 规格书
6页 34K
描述
Breakover diodes

BR211SM-160 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:,Reach Compliance Code:unknown
风险等级:5.87最大转折电压:180 V
JESD-609代码:e0最大通态电压:2.5 V
最高工作温度:70 °C子类别:Silicon Surge Protectors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
触发设备类型:SILICON SURGE PROTECTORBase Number Matches:1

BR211SM-160 数据手册

 浏览型号BR211SM-160的Datasheet PDF文件第1页浏览型号BR211SM-160的Datasheet PDF文件第3页浏览型号BR211SM-160的Datasheet PDF文件第4页浏览型号BR211SM-160的Datasheet PDF文件第5页浏览型号BR211SM-160的Datasheet PDF文件第6页 
Philips Semiconductors  
Preliminary specification  
Breakover diodes  
BR211SM series  
STATIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
1
VTM  
On-state voltage  
ITM = 2 A  
-
-
2.5  
V
V(BR)  
V(BO)  
Avalanche voltage (min)  
Breakover voltage (max)  
I(BR) = 10mA  
I IS, tp = 100 µs  
BR211SM-140  
BR211SM-160  
BR211SM-180  
BR211SM-200  
BR211SM-220  
BR211SM-240  
BR211SM-260  
BR211SM-280  
123  
140  
158  
176  
193  
211  
228  
246  
-
140  
160  
180  
200  
220  
240  
260  
280  
+0.1  
-
157  
180  
202  
224  
247  
269  
292  
314  
-
V
V
V
V
V
V
V
V
S(br)  
2
Temperature coefficient of V(BR)  
Holding current  
%/K  
mA  
mA  
mA  
µA  
IH  
Tj = 25˚C  
150  
100  
10  
-
-
Tj = 70˚C  
-
3
IS4  
Switching current  
Off-state current  
tp = 100 µs  
200  
-
1000  
10  
ID  
VD = 85% V(BR)min, Tj = 70˚C  
-
DYNAMIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
dVD/dt  
Linear rate of rise of off-state  
voltage that will not trigger any  
device  
V(DM) = 85% V(BR)min; Tj = 70 ˚C  
-
-
2000 V/µs  
Cj  
Off-state capacitance  
VD = 0 V; f = 1 kHz to 1 MHz  
-
-
100 pF  
VT  
current  
current  
IT  
ITSM  
100%  
90%  
IS  
IH  
V(BR)  
I(BR)  
V(BO)  
ID  
50%  
30%  
voltage  
VD  
0
time  
Symbol  
10us  
700us  
Symmetric BOD  
Fig.1. Definition of breakover diode characteristics.  
Fig.2. Test waveform for high voltage impulse (ITSM1  
)
according to CCITT vol IX-Rec K17.  
1 Measured under pulsed conditions to avoid excessive dissipation  
2 The minimum current at which the diode will remain in the on-state  
3 The avalanche current required to switch the diode to the on-state  
4 Measured at maximum recommended continuous voltage. Relative humidity < 65%.  
August 1996  
2
Rev 1.100  

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