Datasheet > BR211SM-180

BR211SM-180

更新时间： 2024-02-15 10:18:11

品牌	Logo	应用领域
恩智浦 - NXP		二极管击穿二极管
页数	文件大小	规格书
6页	34K
描述
Breakover diodes

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BR211SM-180 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	最大转折电压：	202 V
JESD-609代码：	e0	最大通态电压：	2.5 V
最高工作温度：	70 °C	子类别：	Silicon Surge Protectors
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
触发设备类型：	SILICON SURGE PROTECTOR

BR211SM-180 数据手册

Philips Semiconductors

Preliminary specification

Breakover diodes

BR211SM series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

A range of bidirectional, breakover

diodes in a two terminal, surface

mounting, plastic envelope. These

devices feature controlled breakover

voltage and high holding current

together with high peak current

SYMBOL

PARAMETER

MIN.

MAX. UNIT

BR211SM-140 to BR211SM-280

Breakover voltage

Holding current

Non-repetitive peak current

V_(BO)

I_H

I_TSM

140

150

280

handling

capability.

Typical

application is transient overvoltage

protection in telecommunications

equipment.

OUTLINE - SOD106

SYMBOL

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_D

Continuous voltage

Non repetitive peak current

75% of

V_(BO)typ

I_TSM1

10/320 µs impulse equivalent to

10/700 µs, 1.6 kV voltage impulse

(CCITT K17)

I_TSM2

Non repetitive on-state current half sine wave; t = 10 ms;

T_j= 70 ˚C prior to surge

I²t

dI_T/dt

I²t for fusing

t_p= 10 ms

1.1

A²s

A/µs

Rate of rise of on-state current t_p= 10 µs

after V_(BO)turn-on

P_tot

P_TM

T_stg

T_a

Continuous dissipation

Peak dissipation

T_a= 25˚C

t_p= 1 ms; T_a= 25˚C

1.2

˚C

Storage temperature

- 40

150

Operating ambient temperature off-state

Overload junction temperature on-state

T_vj

150

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-sp}

R_{th j-a}

Z_{th j-a}

Thermal resistance junction to

solder point

K/W

Thermal resistance junction to pcb mounted; minimum footprint

100

2.62

ambient

Thermal impedance junction to t_p= 1 ms

ambient

August 1996

Rev 1.100

12 3 4 5 6

下载PDF

与BR211SM-180相关器件

型号	品牌	描述	获取价格	数据表
BR211SM-200	NXP	Breakover diodes	获取价格
BR211SM-220	NXP	Breakover diodes	获取价格
BR211SM-240	NXP	Breakover diodes	获取价格
BR211SM-260	NXP	Breakover diodes	获取价格
BR211SM-280	NXP	Breakover diodes	获取价格
BR213-100	PHILIPS	Silicon Surge Protector, 112V V(BO) Max	获取价格