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BQ4842YMA-85 PDF预览

BQ4842YMA-85

更新时间: 2024-09-14 22:39:39
品牌 Logo 应用领域
德州仪器 - TI 计时器或实时时钟微控制器和处理器外围集成电路静态存储器光电二极管双倍数据速率
页数 文件大小 规格书
18页 677K
描述
RTC Module With 128Kx8 NVSRAM

BQ4842YMA-85 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:ROHS COMPLIANT, PLASTIC, MODULE, DIP-32
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.81
Is Samacsys:N最大时钟频率:0.032 MHz
外部数据总线宽度:8信息访问方法:PARALLEL, DIRECT ADDRESS
中断能力:YJESD-30 代码:R-PDMA-T32
端子数量:32计时器数量:
最高工作温度:70 °C最低工作温度:
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP32,.6封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
子类别:Timer or RTC最大供电电压:5.5 V
最小供电电压:4.5 V标称供电电压:5 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
最短时间:1/100 SECOND处于峰值回流温度下的最长时间:NOT SPECIFIED
易失性:NOuPs/uCs/外围集成电路类型:TIMER, REAL TIME CLOCK
Base Number Matches:1

BQ4842YMA-85 数据手册

 浏览型号BQ4842YMA-85的Datasheet PDF文件第2页浏览型号BQ4842YMA-85的Datasheet PDF文件第3页浏览型号BQ4842YMA-85的Datasheet PDF文件第4页浏览型号BQ4842YMA-85的Datasheet PDF文件第5页浏览型号BQ4842YMA-85的Datasheet PDF文件第6页浏览型号BQ4842YMA-85的Datasheet PDF文件第7页 
bq4842Y  
RTC Module With 128Kx8 NVSRAM  
Registers for the rea l-time clock,  
alarm and other special functions  
Features  
General Description  
I n t e gr a t e d S R AM , r e a l-t im e  
clock, CPU supervisor, crysta l,  
power-fa il con t r ol cir cu it , a n d  
battery  
The bq4842Y RTC Module is a non-  
volatile 1,048,576-bit SRAM organ-  
ized as 131,072 words by 8 bits with  
a n in t egr a l a ccessible r ea l-t im e  
clock and CPU supervisor. The CPU  
supervisor provides a programmable  
watchdog timer and a microproces-  
sor reset. Other features include  
alarm, power-fail, and periodic inter-  
rupts, and a battery-low warning.  
are located in registers 1FFF0h–  
1FFFFh of the memory array.  
The clock and alarm registers are  
du a l-por t r ea d/wr it e SRAM loca-  
tions that are updated once per sec-  
ond by a clock control circuit from  
the internal clock counters. The  
dual-port registers allow clock up-  
dates to occur without interrupting  
n or m a l a ccess t o t h e r est of t h e  
SRAM array.  
Rea l-Tim e Clock cou n t s h u n-  
dredths of seconds through years  
in BCD format  
RAM-like clock access  
Compatible with industry-  
Th e device com bin es a n in t er n a l  
lithium battery, quartz crystal, clock  
a n d p ower -fa il ch ip, a n d a fu ll  
CMOS SRAM in a pla st ic 32-pin  
DIP module. The RTC Module di-  
rectly replaces industry-standard  
SRAMs a n d a lso fit s in t o m a n y  
E P R O M a n d E E P R O M s ock e t s  
without any requirement for special  
write timing or limitations on the  
number of write cycles.  
standard 128K x 8 SRAMs  
The bq4842Y also contains a power-  
fail-detect circuit. The circuit dese-  
lects the device whenever VCC falls  
below tolerance, providing a high de-  
gree of data security. The battery is  
electrically isolated when shipped  
from the factory to provide maxi-  
mum battery capacity. The battery  
remains disconnected until the first  
Unlimited write cycles  
10-year minimum data retention  
and clock operation in the ab-  
sence of power  
Automatic power-fail chip dese-  
lect and write-protection  
Watchdog timer, power-on reset,  
alarm/periodic interrupt, power-  
fail and battery-low warning  
application of VCC  
.
Soft wa r e clock ca libr a t ion for  
gr e a t e r t h a n ±1 m in u t e p e r  
month accuracy  
Pin Connections  
Pin Names  
A0–A16  
CE  
Address input  
Chip enable  
RST  
32  
1
V
A
INT  
CC  
A
31  
30  
2
3
16  
15  
A
14  
4
WE  
A
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
12  
RST  
WE  
Microprocessor reset  
Write enable  
5
A
A
A
A
A
A
A
13  
7
6
5
4
3
2
6
A
8
A
9
A
11  
OE  
7
8
9
OE  
Output enable  
10  
11  
12  
13  
14  
15  
16  
A
10  
CE  
DQ  
DQ  
DQ  
DQ  
DQ  
A
1
0
0
DQ0–DQ7 Data in/data out  
A
DQ  
DQ  
DQ  
7
6
5
4
3
INT  
VCC  
VSS  
Programmable interrupt  
1
2
+5 volts  
Ground  
V
SS  
32-Pin DIP Module  
PN484201.eps  
Sept. 1996 C  
1

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