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BPX38-5 PDF预览

BPX38-5

更新时间: 2024-09-12 22:12:47
品牌 Logo 应用领域
威世 - VISHAY 晶体光电晶体管光电晶体管静态存储器
页数 文件大小 规格书
6页 90K
描述
Silicon NPN Phototransistor

BPX38-5 数据手册

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BPX43  
Vishay Telefunken  
Silicon NPN Phototransistor  
Description  
BPX43 is a very high sensitive silicon NPN epitaxial  
planar phototransistor in a standard TO–18 hermeti-  
cally sealed metal case with a glass lens.  
A superior linearity of photocurrent vs. irradiation  
makes it ideal for linear applications. A base terminal  
is available to enable biasing and sensitivity control.  
Features  
Hermetically sealed TO–18 case  
Lens window  
Angle of half sensitivity ϕ = ± 15  
Exact central chip alignment  
Base terminal available  
94 8402  
Very high photo sensitivity  
High linearity  
Suitable for visible and near infrared radiation  
Selected into sensitivity groups  
Applications  
Detector for analogue and digital applications in industrial electronics, measuring and control, e.g. long range  
light barriers with additional optics, optical switches, alarm systems.  
Absolute Maximum Ratings  
T
amb  
= 25 C  
Parameter  
Test Conditions  
Symbol  
Value  
80  
70  
Unit  
V
V
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
V
CBO  
V
CEO  
V
EBO  
7
V
Collector Current  
I
50  
200  
250  
125  
mA  
mA  
mW  
C
C
C
C
Peak Collector Current  
Total Power Dissipation  
Junction Temperature  
Operating Temperature Range  
Storage Temperature Range  
Soldering Temperature  
t
T
10 s  
25 C  
I
p
CM  
P
T
amb  
tot  
j
T
–55...+125  
–55...+125  
260  
op  
T
stg  
t
5 s, distance from  
2 mm  
T
sd  
C
touching border  
Thermal Resistance Junction/Ambient  
Thermal Resistance Junction/Case  
R
R
400  
150  
K/W  
K/W  
thJA  
thJC  
Document Number 81534  
Rev. 2, 20-May-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (6)  

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