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BM2LE080FJ-C (新产品) PDF预览

BM2LE080FJ-C (新产品)

更新时间: 2024-11-19 11:14:23
品牌 Logo 应用领域
罗姆 - ROHM 开关光电二极管
页数 文件大小 规格书
28页 2124K
描述
BM2LE080FJ-C是一款适用于车载12V应用的IPD双通道低边开关。产品内置OCP、Dual TSD及有源钳位功能,利用其诊断功能可以进行TSD诊断。

BM2LE080FJ-C (新产品) 数据手册

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Datasheet  
Automotive IPD 2ch Low Side Switch  
with Output Diagnostic Function  
BM2LE080FJ-C  
Features  
Key Specifications  
Built-in Dual TSD*1  
On-state Resistance (Tj = 25 °C, Typ)  
Over Current Limitation Level  
(Tj = 25 °C, Typ)  
Output Clamp Voltage (Min)  
Active Clamp Energy (Tj(START) = 25 °C)  
80 mΩ  
AEC-Q100 Qualified*2  
Built-in Over Current Protection Function(OCP)  
Built-in Active Clamp Function  
Direct Control Enabled from CMOS Logic IC, etc.  
On Resistance RDS(ON) = 80 (Typ)  
(VIN = 5 V, IOUT = 1.5 A, Tj = 25 °C)  
Monolithic Power Management IC with the  
Control Block (CMOS) and Power MOS FET  
Mounted on a Single Chip  
13 A  
40 V  
200 mJ  
Package  
W (Typ) x D (Typ) x H (Max)  
SOP-J8  
4.9 mm x 6.0 mm x 1.65 mm  
*1 This IC has thermal shutdown (Junction temperature detect)  
and ΔTj Protection (Power-MOS steep temperature rising  
detect).  
*2 Grade1  
General Description  
BM2LE080FJ-C is 2ch low side switch IC for 12 V  
automotive applications. It has built-in OCP, Dual  
TSD and Active Clamp function. It is equipped with  
output diagnostic function for TSD.  
Application  
Driving Resistive, Inductive and Capacitive Load  
Block Diagram  
*1 BM2LE080FJ-C contains 2 circuits. So there are also two block diagrams above.  
Product structure : Silicon integrated circuit This product has no designed protection against radioactive rays.  
www.rohm.com  
© 2021 ROHM Co., Ltd. All rights reserved.  
TSZ22111 14 001  
TSZ02201-0GYG1G400190-1-2  
16.Mar.2022 Rev.001  
1/25  
 
 
 
 
 
 

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