5秒后页面跳转
BLV20 PDF预览

BLV20

更新时间: 2024-11-24 12:50:03
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 18K
描述
NPN SILICON RF POWER TRANSISTOR

BLV20 技术参数

生命周期:Active包装说明:FLANGE MOUNT, O-CRFM-F4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.13
最大集电极电流 (IC):1 A集电极-发射极最大电压:35 V
配置:Single最小直流电流增益 (hFE):10
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-CRFM-F4
端子数量:4最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):20 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

BLV20 数据手册

  
BLV20  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI BLV20 is Designed for  
Class C, 28 V High Band Applications  
up to 175 MHz.  
PACKAGE STYLE .380 4L FLG  
FEATURES:  
Common Emitter  
PG = 12 dB at 8.0 W/175 MHz  
Omnigold™ Metalization System  
.112 x 45°  
B
A
Ø.125 NOM.  
FULL R  
E
C
E
J
.125  
B
MAXIMUM RATINGS  
C
D
E
1.0 A  
65 V  
IC  
F
I
H
G
VCBO  
VCEO  
VCES  
VEBO  
PDISS  
TJ  
35 V  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
65 V  
.220 / 5.59  
.785 / 19.94  
.720 / 18.29  
.970 / 24.64  
.230 / 5.84  
A
B
C
D
E
F
G
H
I
4.0 V  
.730 / 18.54  
.980 / 24.89  
.385 / 9.78  
.006 / 0.15  
.105 / 2.67  
.180 / 4.57  
.280 / 7.11  
.255 / 6.48  
20 W @ TC = 25 ° C  
-65 °C to +200 °C  
-65 °C to +150°C  
8.75 °C/W  
.004 / 0.10  
.085 / 2.16  
.160 / 4.06  
.240 / 6.10  
J
TSTG  
θJC  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCBO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 200 mA  
IC = 2.0 mA  
IC = 10 mA  
IE = 1.0 mA  
VCB = 36 V  
65  
65  
35  
4.0  
V
BVCES  
BVCEO  
BVEBO  
ICBO  
V
V
V
1.0  
mA  
---  
V
CE = 5.0 V  
IC = 400 mA  
POUT = 8.0 W  
10  
12  
100  
hFE  
VCB = 28 V  
VCC = 28 V  
f = 1.0 MHz  
f = 175 MHz  
10  
60  
CC  
pF  
PG  
dB  
%
ηC  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. B  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

BLV20 替代型号

型号 品牌 替代类型 描述 数据表
BLV57 ASI

功能相似

NPN SILICON RF POWER TRANSISTOR
BLW50F ASI

功能相似

NPN SILICON RF POWER TRANSISTOR
2N6083 MICROSEMI

功能相似

RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS

与BLV20相关器件

型号 品牌 获取价格 描述 数据表
BLV2040 ETC

获取价格

TRANSISTOR | BJT | NPN | 28V V(BR)CEO | 300MA I(C) | SOT-409B
BLV2042 NXP

获取价格

UHF power transistor
BLV2042T/R NXP

获取价格

TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power
BLV2044 NXP

获取价格

UHF power transistor
BLV2045 ETC

获取价格

RF Power Transistors for UHF
BLV2045N NXP

获取价格

UHF power transistor
BLV2046 NXP

获取价格

UHF power transistor
BLV2047 NXP

获取价格

UHF power transistor
BLV21 NXP

获取价格

UHF power transistor
BLV21 ASI

获取价格

NPN SILICON RF POWER TRANSISTOR