Datasheet > BLV297

BLV297

更新时间： 2024-09-27 12:50:55

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
1页	85K
描述
N-channel Enhancement Mode Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BLV297 数据手册

BLV297

N-channel Enhancement Mode Power MOSFET

BV_DSS

R_DS(ON)

I_D

200V

2.0Ω

•

Ease of Paralleling

Fast Switching

•

Simple Drive Requirements

0.65A

Description

This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.

Designed for high efficiency logic level circuit

o Die size with scribe line

Scribe line

1570µm X 1570µm

80um

o Die Thickness

o Metallization

Top

300±20um

Bottom

Ti / Ni / Ag

o Bonding Pad Size

Gate

140µm X 102µm

540µm X 540µm

Source

o Passivation

Electrical Characteristics

( T_C=25C unless otherwise noted )

Symbol

BV_DSS

R_DS(ON)

V_GS(th)

I_DSS

Test Conditions

V_GS=0V, I_D=250uA

V_GS=10V, I_D=0.65A

V_DS=V_GS, I_D=400uA

V_DS=200V, V_GS=0V

V_GS= 20V

Min.

Typ.

Max. Units

Parameter

Drain-Source Breakdown Voltage

Static Drain-Source On-Resistance

Gate Threshold Voltage

200

0.5

2.0

1.8

0.1

Drain-Source Leakage Current

Gate-Source Leakage Current

Forward On Voltage

I_GSS

V_SD

V_GS=0V, I_S=0.65A

1.2

http://www.belling.com.cn

- 1 -

2/27/2008

Total 1 Pages

中文翻译

下载PDF

与BLV297相关器件

型号	品牌	获取价格	描述	数据表
BLV2N60	BELLING	获取价格	BLV2N60
BLV2N60	ESTEK	获取价格	N-channel Enhancement Mode Power MOSFET
BLV30	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
BLV30	NJSEMI	获取价格	Trans GP BJT NPN 33V 12.5A 4-Pin SOT-147
BLV30_06	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
BLV31	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
BLV31	NJSEMI	获取价格	Trans GP BJT NPN 33V 12.5A 4-Pin SOT-147
BLV32F	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
BLV32F	NJSEMI	获取价格	Trans GP BJT NPN 33V 12.5A 4-Pin SOT-147
BLV33	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR