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BLV21

更新时间: 2024-02-09 09:28:49
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 18K
描述
NPN SILICON RF POWER TRANSISTOR

BLV21 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:,Reach Compliance Code:unknown
风险等级:5.89最大集电极电流 (IC):1.7 A
配置:Single最小直流电流增益 (hFE):10
JESD-609代码:e0最高工作温度:200 °C
极性/信道类型:NPN最大功率耗散 (Abs):36 W
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)

BLV21 数据手册

  
BLV21  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI BLV21 is Designed for  
Class C, 28 V High Band Applications  
up to 175 MHz.  
PACKAGE STYLE .380 4L FLG  
FEATURES:  
Common Emitter  
PG = 10 dB at 15 W/175 MHz  
Omnigold™ Metalization System  
.112 x 45°  
B
A
Ø.125 NOM.  
FULL R  
E
C
E
J
.125  
B
MAXIMUM RATINGS  
C
D
E
1.75 A  
35 V  
IC  
F
I
H
G
VCEO  
VCES  
VEBO  
PDISS  
TJ  
65 V  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
4.0 V  
.220 / 5.59  
.785 / 19.94  
.720 / 18.29  
.970 / 24.64  
.230 / 5.84  
A
B
C
D
E
F
G
H
I
36 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
4.8 °C/W  
.730 / 18.54  
.980 / 24.89  
.385 / 9.78  
.006 / 0.15  
.105 / 2.67  
.180 / 4.57  
.280 / 7.11  
.255 / 6.48  
.004 / 0.10  
.085 / 2.16  
.160 / 4.06  
TSTG  
θJC  
.240 / 6.10  
J
ORDER CODE: ASI10579  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCEO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 25 mA  
IC = 5.0 mA  
IE = 10 mA  
35  
V
65  
BVCES  
BVEBO  
ICBO  
V
4.0  
V
V
CB = 30 V  
CE = 5.0 V  
1.0  
---  
mA  
---  
V
IC = 200 mA  
POUT = 15 W  
5.0  
hFE  
VCB = 30 V  
VCC = 28 V  
f = 1.0 MHz  
f = 175 MHz  
50  
COB  
pF  
10  
65  
PG  
dB  
%
ηC  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  
REV. B  
1/1  

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