Datasheet > BLG15T65FUL

BLG15T65FUL

更新时间： 2023-12-06 20:09:38

品牌	Logo	应用领域
上海贝岭 - BELLING		双极性晶体管
页数	文件大小	规格书
16页	1022K
描述
BLG15T65FUL is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat) , optimized swiching performance and low gate Qg. The IGBT is suitable device for BLDC, UPS, and low VCE(sat) applications.

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BLG15T65FUL 数据手册

BLG15T65FUL

IGBT

2．ABSOLUTE RATINGS

at T_C= 25°C, unless otherwise specified

TO-220/

TO-263

Symbol

V_CES

Parameter

TO-220F Units

Collector-Emitter Voltage

650

Collector Current @T_C=25°C

I_C

I_CM

I_F

Collector Current @T_C=100°C

Pulsed Collector Current, tp limited by T_Jmax

Diode Continuous Forward Current @T_C=25°C

Diode Continuous Forward Current @T_C=100°C

Diode Maximum Forward Current, limited by T_Jmax

Gate-Emitter Voltage

7.5

I_FM

V_GES

±30

Short circuit withstand time V_GE=15V, V_CC≤400V,

Allowed number of short circuits<1000,Times

between short circuits: ≥ 1.0s,T_J≤ 175°C

t_SC

3.0

µs

Power Dissipation @T_C=25°C

P_D

136

℃

Operating Junction and Storage Temperature

Range

T_Jmax,T_stg

175, –55 to 175

Maximum Temperature for Soldering

T_L

260

3．Thermal characteristics

Symbol

Parameter

TO-220/TO-263 TO-220F Units

Junction-to-Case (IGBT)

R_θJC

1.1

2.1

3.6

3.9

℃/W

Junction-to-Case (Diode)

Junction-to-Ambient

R_θJC

R_θJA

62.5

4．Electrical Characteristics

at T_C= 25°C, unless otherwise specified

Static Characteristics

Values

Symbol

V_CES

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Collector-Emitter Breakdown

Voltage

V_GE= 0V,

I_C= 250µA

650

V_GE= 15V,I_C= 15A

1.40 1.80

T_J=25℃

Collector-Emitter Saturation

Voltage

V_CE(sat)

1.60

1.70

T_J=125℃

T_J=175℃

BLG15T65FUL

Rev5.0

02/2023

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