Datasheet > BLF6G27L-50BN,118

BLF6G27L-50BN,118

更新时间： 2024-11-23 14:32:59

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恩智浦 - NXP		/
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BLF6G27L-50BN

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BLF6G27L-50BN,118 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	DFM
针数：	2	Reach Compliance Code：	compliant
风险等级：	5.71	Is Samacsys：	N
Base Number Matches：	1

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BLF6G27L-50BN;

BLF6G27LS-50BN

Power LDMOS transistor

Rev. 2 — 7 April 2011

Product data sheet

1. Product profile

1.1 General description

50 W LDMOS power transistor for base station applications at frequencies from

2500 MHz to 2700 MHz.

Table 1.

Typical performance

RF performance at T_case= 25 °C in a common source class-AB production test circuit.

Mode of operation

I_Dq

V_DS

(V)

P_L(AV)

(W)

G_p

η_D

ACPR

(MHz)

(mA)

430

(dB)

16.5

(%) (dBc)

14.5 −47^[1]

2-carrier W-CDMA

2500 to 2700

[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier;

carrier spacing 5 MHz

1.2 Features and benefits

Typical 2-carrier W-CDMA performance at frequencies of 2500 MHz and 2700 MHz, a

supply voltage of 28 V and an I_Dqof 430 mA:

Average output power = 3 W

Power gain = 16.5 dB (typical)

Efficiency = 14.5 %

ACPR = −47 dBc

Easy power control

Integrated ESD protection

Excellent ruggedness

High efficiency

Excellent thermal stability

Designed for broadband operation (2500 MHz to 2700 MHz)

Internally matched for ease of use

Integrated current sense

Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

1.3 Applications

RF power amplifiers for base stations and multi carrier applications in the 2500 MHz to

2700 MHz frequency range

12 3 4 5 6 7...16

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