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BL3404DF1 PDF预览

BL3404DF1

更新时间: 2024-11-25 17:00:51
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
6页 789K
描述
5.8A, 30V, 2W, N Channel, Power MOSFETs

BL3404DF1 数据手册

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N-Channel Enhancement Mode MOSFET  
BL3404DF1  
Features  
Electrostatic Sensitive Devices  
RDS(ON) < 28mΩ @ VGS = 10V  
RDS(ON) < 43mΩ @ VGS = 4.5V  
Mechanical Data  
Case: DFN2020-6L  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,  
Method 208  
DFN2020-6L  
Ordering Information  
Part Number  
Package  
Shipping Quantity  
Marking Code  
BL3404DF1  
DFN2020-6L  
3000 pcs / Tape & Reel  
3404  
Maximum Ratings (@ TC = 25°C unless otherwise specified)  
Parameter  
Symbol  
Value  
Unit  
Drain-to-Source Voltage  
VDSS  
VGSS  
30  
V
V
Gate-to-Source Voltage  
±20  
Continuous Drain Current (TA = 25°C ) *1  
Continuous Drain Current (TA = 70°C ) *1  
Pulsed Drain Current (tp = 10μs, TA = 25°C )  
Single Pulse Avalanche Energy *3  
Power Dissipation (TC = 25°C )  
5.8  
A
ID  
4.9  
A
IDM  
30  
A
EAS  
8
mJ  
W
W
°C  
°C  
10  
PD  
Power Dissipation (TA = 25°C ) *1  
Operating Junction Temperature Range  
Storage Temperature Range  
1.7  
TJ  
-55 ~ +150  
-55 ~ +150  
TSTG  
Thermal Characteristics  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Thermal Resistance Junction-to-Case  
Thermal Resistance Junction-to-Air *1  
RθJC  
RθJA  
-
-
-
-
12  
75  
°C /W  
°C /W  
MTM0518A: September 2023 [2.0]  
www.gmesemi.com  
1

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