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BL3400 PDF预览

BL3400

更新时间: 2024-11-28 17:00:43
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
7页 771K
描述
5.7A, 30V, 1.4W, N Channel, Power MOSFETs

BL3400 数据手册

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N-Channel Enhancement Mode MOSFET  
BL3400 BL3400-3L  
Features  
Electrostatic sensitive devices  
RDS(ON) < 26.5mΩ @ VGS = 10V  
RDS(ON) < 32mΩ @ VGS = 4.5V  
RDS(ON) < 48mΩ @ VGS = 2.5V  
BL3400  
SOT-23  
BL3400-3L  
SOT-23-3L  
Mechanical Data  
Case: SOT-23, SOT-23-3L  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,  
Method 208  
Ordering Information  
Part Number  
Package  
Shipping Quantity  
Marking Code  
BL3400  
SOT-23  
3000 pcs / Tape & Reel  
3000 pcs / Tape & Reel  
3400  
3400  
BL3400-3L  
SOT-23-3L  
Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Value  
Unit  
Drain-to-Source Voltage  
VDSS  
VGSS  
30  
V
V
Gate-to-Source Voltage  
±12  
Continuous Drain Current (TA = 25°C ) *1  
Continuous Drain Current (TA = 70°C ) *1  
Pulsed Drain Current (tp = 10μs, TA = 25°C )  
Single Pulse Avalanche Energy *3  
Power Dissipation (TA = 25°C ) *1  
Operating Junction Temperature Range  
Storage Temperature Range  
5.7  
A
ID  
4.7  
A
IDM  
EAS  
PD  
30  
7
A
mJ  
W
°C  
°C  
1.4  
TJ  
-55 ~ +150  
-55 ~ +150  
TSTG  
Thermal Characteristics  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Thermal Resistance Junction-to-Case  
Thermal Resistance Junction-to-Air *1  
RθJC  
RθJA  
-
-
35  
75  
50  
89  
°C /W  
°C /W  
MTM0074A: October 2023 [2.0]  
www.gmesemi.com  
1

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