Datasheet > BL23N50

BL23N50

更新时间： 2023-12-06 20:10:32

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
15页	720K
描述
BL23N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

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BL23N50 数据手册

BL23N50

Power MOSFET

5. Characteristics Curves

Figure 1a Safe Operating Area (No FullPAK)

Figure 1b Safe Operating Area (FullPAK)

Figure 2a Power Dissipation (No FullPAK)

Figure 2b Power Dissipation (FullPAK)

BL23N50

Rev 1.0

3/2019

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