Datasheet > BL23N50

BL23N50

更新时间： 2023-12-06 20:10:32

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
15页	720K
描述
BL23N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

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BL23N50 数据手册

BL23N50

Power MOSFET

2．ABSOLUTE RATINGS

at T_C= 25°C, unless otherwise specified

Symbol Parameter

Rating

Units

Drain-to-Source Voltage

V_DSS

500

Continuous Drain Current

I_D

Continuous Drain Current T_C= 100 °C

14.5

Pulsed Drain Current(Note1)

I_DM

Gate-to-Source Voltage

V_GS

±30

1500

5.0

Single Pulse Avalanche Energy(Note2)

E_AS

V/ns

Peak Diode Recovery dv/dt(Note3)

dv/dt

Power Dissipation

TO-220, TO-3PN

271

W/℃

P_D

Derating Factor above 25°C

Power Dissipation

2.18

TO-220F, TO-3PF

P_D

Derating Factor above 25°C

0.4

150，–55 to 150

300

W/℃

℃

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

T_J，T_stg

T_L

℃

3．Thermal characteristics

Thermal characteristics (No FullPAK) TO-220\TO-3PN

Symbol Parameter

RATINGS

0.46

Units

Junction-to-Case

R_θJC

℃/W

Junction-to-Ambient

R_θJA

62.5

Thermal characteristics (FullPAK) TO-220F\TO-3PF

Symbol Parameter

RATINGS

2.5

Units

℃/W

Junction-to-Case

R_θJC

Junction-to-Ambient

R_θJA

62.5

BL23N50

Rev 1.0

3/2019

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