Datasheet > BL19N40

BL19N40

更新时间： 2023-12-06 20:09:06

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
13页	1048K
描述
BL19N40, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

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BL19N40 数据手册

BL19N40

Power MOSFET

Figure 6 Typical Drain to Source ON Resistance

vs Drain Current

Figure 7 Typical Drian to Source on Resistance

vs Junction Temperature

Figure 8 Typical Theshold Voltage vs Junction

Temperature

Figure 9 Typical Breakdown Voltage vs Junction

Temperature

BL19N40

Rev 1.1

8/2019

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