Datasheet > BL19N40

BL19N40

更新时间： 2023-12-06 20:09:06

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
13页	1048K
描述
BL19N40, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

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BL19N40 数据手册

BL19N40

Power MOSFET

Switching Characteristics

Values

Units

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Turn-on Delay Time

Rise Time

t_d(ON)

t_d(OFF)

t_f

ID =19A

VDD = 250V

VGS = 10V

RG =10Ω

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain (“Miller”)Charge

Q_g

ID =19A

VDD =320V

VGS = 10V

Q_gs

Q_gd

-- 12.5 --

-- 10.5 --

Source-Drain Diode Characteristics

Values

Typ.

Test

Conditions

Symbol

Parameter

Units

Min.

Max.

Continuous Source Current (Body

Diode)

Maximum Pulsed Current (Body

Diode)

I_S

TC=25 °C

I_SM

IS=19A,

VGS=0V(Note4)

IS=19A,

Tj = 25°C

Diode Forward Voltage

Reverse Recovery Time

V_SD

T_rr

1.2

285

dIF/dt=100A/us,

VGS=0V

Reverse Recovery Charge

3900

Q_rr

Note1: Pulse width limited by maximum junction temperature

Note2: L=10mH, VDs=50V, Start TJ=25℃

Note3: ISD =19A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25℃

Note4: Pulse width tp≤300µs, δ≤2%

BL19N40

Rev 1.1

8/2019

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