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BL19N40 PDF预览

BL19N40

更新时间: 2023-12-06 20:09:06
品牌 Logo 应用领域
上海贝岭 - BELLING /
页数 文件大小 规格书
13页 1048K
描述
BL19N40, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

BL19N40 数据手册

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BL19N40  
Power MOSFET  
4Electrical Characteristics  
at TC = 25°C, unless otherwise specified  
OFF Characteristics  
Values  
Typ.  
Test  
Conditions  
Symbol  
VDSS  
Parameter  
Units  
V
Min.  
Max.  
Drain to Source Breakdown  
Voltage  
VGS=0V,  
ID=250µA  
400  
--  
--  
ΔBVDSS/Δ  
TJ  
ID=250uA,  
Reference25  
Bvdss Temperature  
Coefficient  
V/℃  
--  
--  
0.45  
--  
--  
1
VDS =400V,  
VGS= 0V,  
Tj = 25℃  
µA  
µA  
Drain to Source Leakage  
Current  
IDSS  
VDS =320V,  
VGS= 0V,  
Tj = 125℃  
--  
--  
10  
Gate to Source Forward  
Leakage  
Gate to Source Reverse  
Leakage  
VGS =+30V  
VGS =-30V  
nA  
nA  
IGSS(F)  
IGSS(R)  
--  
--  
--  
--  
100  
-100  
ON Characteristics  
Values  
Typ.  
Symbol  
Parameter  
Test Conditions  
Units  
Min.  
Max.  
Drain-to-Source On-  
Resistance  
VGS=10V,  
ID=4A(Note4)  
RDS(ON)  
VGS(TH)  
gfs  
-- 0.22 0.27  
V
S
VDS = VGS,  
ID = 250µA(Note4)  
Gate Threshold Voltage  
2
3
4
VDS=15V,  
ID =9.5A(Note4)  
Forward Transconductance  
-- 10.0  
--  
Dynamic Characteristics  
Values  
Typ.  
Symbol  
Parameter  
Test Conditions  
Units  
Min.  
Max.  
Gate resistance  
f = 1.0MHz  
Rg  
--  
1.4  
--  
Input Capacitance  
Output Capacitance  
Ciss  
Coss  
-- 2300 --  
VGS = 0V  
VDS = 25V  
f = 1.0MHz  
--  
--  
210  
3.3  
--  
--  
PF  
Reverse Transfer  
Capacitance  
Crss  
BL19N40  
Rev 1.1  
8/2019  
www.belling.com.cn  
Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited  
©2011 Belling All Rights Reserved  
3 / 13  

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