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BL19N40 PDF预览

BL19N40

更新时间: 2023-12-06 20:09:06
品牌 Logo 应用领域
上海贝岭 - BELLING /
页数 文件大小 规格书
13页 1048K
描述
BL19N40, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

BL19N40 数据手册

 浏览型号BL19N40的Datasheet PDF文件第7页浏览型号BL19N40的Datasheet PDF文件第8页浏览型号BL19N40的Datasheet PDF文件第9页浏览型号BL19N40的Datasheet PDF文件第10页浏览型号BL19N40的Datasheet PDF文件第11页浏览型号BL19N40的Datasheet PDF文件第12页 
BL19N40  
Power MOSFET  
NOTE:  
1. Exceeding the maximum ratings of the device in performance may cause damage to the device,  
even the permanent failure, which may affect the dependability of the machine. Please do not  
exceed the absolute maximum ratings of the device when circuit designing.  
2. When installing the heat sink, please pay attention to the torsional moment and the smoothness  
of the heat sink.  
3. MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the  
device from being damaged by the static electricity when using it.  
4. Shanghai Belling reserves the right to make changes in this specification sheet and is subject to  
change without prior notice.  
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传真:010-8835 9236  
BL19N40  
Rev 1.1  
8/2019  
www.belling.com.cn  
Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited  
©2011 Belling All Rights Reserved  
13 / 13  

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